Abstract: In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases. The SIC manufactured by the chemical vapor deposition method is ?-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.
Type:
Grant
Filed:
May 22, 2019
Date of Patent:
January 2, 2024
Assignee:
DS TECHNO CO., LTD.
Inventors:
Hak Jun Ahn, Young Ju Kim, Youn Woong Jung, Kang Suk Kim, Jun Baek Song, Won Geun Son
Abstract: In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases. The SIC manufactured by the chemical vapor deposition method is ?-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.
Type:
Application
Filed:
May 22, 2019
Publication date:
November 18, 2021
Applicant:
DS TECHNO CO., LTD.
Inventors:
Hak Jun AHN, Young Ju KIM, Youn Woong JUNG, Kang Suk KIM, Jun Baek SONG, Won Geun SON