Abstract: A system and method for annealing a target substrate such as a semiconductor using industrial microwave heating and parallel plate reaction. Using a uniform microwave field, with the target substrate located between parallel plates controls application of eddy currents to the target substrate. The system may include a uniform microwave field generator, support elements, two plates held in parallel to each other, and a turntable device configured to rotate the two plates and the target substrate within the uniform microwave field. The rotating of the plates and target substrate in the uniform microwave field creates a periodic change in polarity of the microwaves applied to the target substrate. The eddy currents in the uniform microwave field react by flowing perpendicular to the plates, and not parallel to the surface as in traditional microwave reactions of metals. This redirection of the eddy currents provides even heating of the target substrate.