Abstract: Double gate JFET with reduced area consumption and fabrication method therefore. Double-gate semiconductor device including a substrate having a shallow trench isolator region comprising a first STI and a second STI, a channel region having a first and second channel edges, the channel region formed in the substrate and disposed between and in contact with the first STI and the second STI at the first and second channel edge. The first STI has a first cavity at the first channel edge, and the second STI has a second cavity at the second channel edge. The device further includes a gate electrode region comprising conductive material filling at least one of the first and second cavities. At least one of the first and second cavities is physically configured to provide electrical coupling of the gate electrode region to a back-gate P-N junction.

Abstract: A transistor includes a channel region with a first portion and a second portion. A length of the first portion is smaller than a length of the second portion. The first portion has a higher threshold voltage than the second portion. The lower threshold voltage of the second portion allows for an increased ON current. Despite the increase attained in the ON current, the higher threshold voltage of the first portion maintains or lowers a relatively low OFF current for the transistor.

Abstract: Process for fabrication of MOS semiconductor structures and transistors such as CMOS structures and transistors with thin gate oxide, polysilicon surface contacts having thickness on the order of 500 Angstroms or less and with photo-lithographically determined distances between the gate surface contact and the source and drain contacts. Semiconductor devices having polysilicon surface contacts wherein the ratio of the vertical height to the horizontal dimension is approximately unity. Small geometry Metal-Oxide-Semiconductor (MOS) transistor with thin polycrystalline surface contacts and method and process for making the MOS transistor. MOS and CMOS transistors and process for making. Process for making transistors using Silicon Nitride layer to achieve strained Silicon substrate. Strained Silicon devices and transistors wherein fabrication starts with strained Silicon substrate.

Abstract: A system for identifying asserted signals includes a plurality of input ports, a priority encoding module, and a match module. The plurality of input ports receive one of a plurality of input signals. The priority encoding module is coupled to the plurality of input ports and outputs a signal indicating a highest-priority input signal that is asserted. The match module is also coupled to the plurality of input ports and receives a plurality of match detect signals from the priority encoding module. Each match detect signal is associated with a particular input signal and indicates whether another input signal having a higher-priority than the associated input signal is asserted. The match module also generates a multiple match signal based on the input signals and the match detect signals. The multiple match signal indicates whether more than one of the input signals is asserted.

Abstract: A method for using an inverter with a pair of complementary junction field effect transistors (CJFET) with a small linewidth is provided. The method includes having an input capacitance for said CJFET inverter to be less than the corresponding input capacitance of a CMOS inverter of similar linewidth. The CJFET operates at a power supply with a lesser value than the voltage drop across a forward-biased diode having a reduced switching power as compared to said CMOS inverter and having a propagation delay for said CJFET inverter that is at least comparable to the corresponding delay of said CMOS inverter.