Abstract: A method and associated composition for CMP processing of noble metal-containing substrates (such as ruthenium-containing substrates) afford both high removal rates of the noble metal and are tunable with respect to rate of noble metal removal in relation to removal of other films. Low levels of an oxidizing agent containing one or more peroxy-functional group(s) can be used along with a novel ligand to effectively polish noble metal substrates.

Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate afford low dishing levels in the polished substrate while simultaneously affording high metal removal rates. Suitable metal-containing substrates include tungsten- and copper-containing substrates. Components in the composition include a silatrane compound, an abrasive, and, optionally, a strong oxidizing agent, such as a per-compound.

Abstract: A CMP composition and associated method are provided that afford good corrosion protection and low defectivity levels both during and subsequent to CMP processing. This composition and method are useful in CMP (chemical mechanical planarization) processing in semiconductor manufacture involving removal of metal(s) and/or barrier layer material(s) and especially for CMP processing in low technology node applications.

Abstract: A chemical-mechanical planarization composition containing surface-modified abrasive particles such as silica where at least a portion of the surface of the particles has bound thereto a surface-modifying aluminum-containing stabilizer and fluoride that is used to polish semiconductor substrates. The use of a CMP slurry containing surface-modifying aluminum-containing stabilizer and fluoride bound to a silica abrasive provides high metal polishing rates relative to the removal rate of a dielectric.

Abstract: A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten.

Abstract: The titled method affords low dishing levels in the polished substrate while simultaneously affording high metal removal rates. The method utilizes an associated polishing composition. Components in the composition include a poly(alkyleneimine) such as polyethyleneimine, an abrasive, an acid, and an oxidizing agent, such as a per-compound.

Abstract: A method using an associated composition for chemical mechanical planarization of a copper-containing substrate affords high copper removal rates and low dishing values during CMP processing of the copper-containing substrate, including an abrasive, at least three surfactants, preferably non-ionic and preferably three distinct surfactants, preferably in the range of 100 ppm to 2000 ppm per surfactant and an oxidizing agent.

Abstract: An effective chemical mechanical planarization (CMP) method is provided for forming vias in silicon wafers for the fabrication of stacked devices using TSV (through-silicon via) technology. The method affords high removal rates of both metal (e.g., copper) and silicon such that a need for a grinding step prior to CMP processing may not be necessary. The method affords an approximately 1:1 Cu:Si selectivity for removal of silicon and copper under appropriate conditions and the Cu:Si selectivity is tunable by adjustment of levels of some key components.

Abstract: This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.

Abstract: An effective method for forming through-base wafer vias for the fabrication of stacked devices, such as electronic devices, is described. The base wafer can be a silicon wafer, in which case the method relates to TSV (through-silicon via) technology. The method affords high removal rates of silicon under appropriate conditions.

Abstract: A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.

Abstract: A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a. low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

Abstract: A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.

Abstract: A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 ? reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days.

Abstract: A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.

Abstract: An effective method for forming through-base wafer vias in the fabrication of stacked devices is described. The base wafer can be a silicon wafer in which case the method relates to TSV (through-silicon via) technology. The method affords high removal rates of both silicon and metal (e.g., copper) under appropriate conditions and is tuneable with respect to base wafer material to metal selectivity.

Abstract: A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

Abstract: A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon comprising a noble metal, noble metal alloy, noble metal oxide, or any combination thereof. In one embodiment, the periodic acid is present in an amount in a range of from about 0.05 to about 0.3 moles/kilogram, and the abrasive is present in an amount in a range of from about 0.2 to about 6 weight percent. In another embodiment, the composition further comprises a pH-adjusting agent present in an amount sufficient to cause the pH of the composition to be in a range of from about pH 5 to about pH 10, or of from about pH 1 to about pH 4.

Abstract: A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.