Abstract: A method of fabrication of electrical contact structures on a semiconductor material is described comprising the steps of: depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material; and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described.

Abstract: A method of and apparatus for obtaining radiation transmission data and especially an image of an object in such manner that allows some data about relative proportions of constituent materials to be derived is described. A radiation source and a radiation detector system able to resolve transmitted intensity across a plurality of frequencies within the spectrum of the source are used to produce transmitted intensity data for each such frequency. Measured data is compared numerically to a mass attenuation data library storing mass attenuation data, individually or collectively, for a small number of expected constituent component materials to fit each intensity data item to the relationship given by the exponential attenuation law: I/Io=exp[?(?/?)?t] in respect of the constituent component materials and derive therefrom an indication of relative proportions of each constituent component material. An image may be generated from the resolved transmitted intensity data.

Abstract: The present invention relates to an apparatus for vapour phase crystal growth to produce multiple single crystals in one growth cycle comprising one central source chamber, a plurality of growth chambers, a plurality of passage means adapted for transport of vapour from the source chamber to the growth chambers, wherein the source chamber is thermally decoupled from the growth chambers.

Abstract: A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.

Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.

Abstract: A method and apparatus for obtaining radiation transmission data including providing a radiation source, e.g., x-ray or gamma-ray source, and a radiation detector system, e.g., x-ray or gamma-ray detection system, spaced therefrom to define a scanning zone therebetween, the detector system capable of detecting and collecting spectroscopically resolvable information about incident radiation. Collecting a dataset of information about radiation incident including transmissivity of an object in the scanning zone at at least one scanning position from radiation transmitted through the object and received at the detector system. Resolving each dataset spectroscopically across a plurality of frequency bands within the spectrum of the source; at least one of the frequency bands corresponding to a characteristically scattered wavelength of a target species to be identified.

Abstract: An apparatus for generating and displaying an image of an object comprising a radiation source and a series of at least two linear detectors capable of resolving incident source radiation spectroscopically spaced therefrom to define a scanning zone therebetween; means to cause an object to move relative to and through the scanning zone in use; an image generation apparatus to generate at least a first image from the output of a first linear detector, a second image from the output of second linear detector, and a third image, such that each such image includes a representation of spectroscopically resolved incident radiation; an image display adapted successively to display at least the first, second and third such images and thus display the monocular movement parallax between the images.

Abstract: A structure including a substrate, an intermediate layer provided and formed directly onto the substrate, a transition region, and a group II-VI bulk crystal material provided and formed as an extension of the transition region. The transition region acts to change the structure from the underlying substrate to that of the bulk crystal. In a method of manufacture, a similar technique can be used for growing the transition region and the bulk crystal layer.

Abstract: Device and method of forming a device in which a substrate (10) is fabricated with at least part of an electronic circuit for processing signals. A bulk single crystal material (14) is formed on the substrate, either directly on the substrate (10) or with an intervening thin film layer or transition region (12). A particular application of the device is for a radiation detector.