Abstract: A SOA that includes a SOA input optical port, a first region, a mirror, a second region and a SOA output optical port. At least one of the first region and the second region is an active region configured to amplify an optical signal. The SOA input optical port, the first region, the mirror, the second region, and the SOA output optical port are in optical communication with each other. The SOA input optical port and the SOA output optical port are located at a first facet of the SOA. The first region and the second region are oriented to each other, and are oriented to the first facet of the SOA.

Abstract: An electro-optical (EO) modulator that includes (i) a substrate. (ii) a modulation unit that includes an EO modulation layer and a modulation zone waveguide that is optically coupled to the EO modulation layer and is partially surrounded by one or more gaps. (iii) radio-frequency electrodes that are electromagnetically coupled to the EO modulation layer. (iv) an input waveguide that is configured to guide light towards the modulation unit; and (v) an output waveguide that is configured to receive modulated light from the modulation unit.

Abstract: There may be provided a silicon photonics unit that may include an input waveguide that is configured to convey an input optical signal; a distribution unit (DU) that comprises a DU input port, a first DU output port, a second DU output port and a distribution core; wherein the distribution core is configured to receive the input optical signal, split the input optical signal to a first optical signal and a second optical signal, provide the first optical signal to the first DU output port and provide the second optical signal to the second DU output port; a photodetector (PD) that comprises a PD's first optical input port, a PD's second optical input port, and a PD's electrical output port; wherein the PD is configured to output, via the PD output port, a PD output signal indicative of the first optical signal and the second optical signal; a first optical path that comprises a first waveguide and is configured to convey the first optical signal to the PD's first optical input port; and a second optical path

Abstract: A method for aligning a laser unit to a waveguide unit, the method may comprise placing the laser unit in a tested position in which the laser unit faces the waveguide unit; supplying light, via a coupler of the waveguide unit, to an alignment waveguide of the waveguide unit; receiving light reflected from the alignment waveguide; wherein when aligned to the waveguide unit, an alignment unit of the laser unit reflects toward the alignment waveguide light having a spectral signature of the alignment unit; and wherein when misaligned to the waveguide unit, the laser unit is configured to reflect light without the spectral signature of the alignment unit towards the alignment waveguide; determining whether the light reflected from the alignment waveguide comprises the spectral signature associated with the alignment unit of the laser unit; wherein the alignment waveguide exhibits a frequency selective response that has the spectral signature; wherein the frequency selective response differs from a reflection fro

Abstract: A device and a method for aligning a laser unit to a waveguide unit. The method may include (a) placing the laser unit in a tested position in which the laser unit faces the waveguide unit;(b) supplying light, via a coupler of the waveguide unit, to an alignment waveguide of the waveguide unit; (c) receiving light emitted from the alignment waveguide; wherein the light was emitted as result of the supplying of the light; (d) determining whether the light emitted from the alignment comprises a spectral signature associated with an alignment unit of the laser unit; and (e) estimating whether the laser unit is aligned to the waveguide unit based on the determining of step (d).

Abstract: A method for operating multiple chip regions. The method includes aligning the multiple chip regions using first wavelength band signals, and conveying transmission signals of a second wavelength band signals. The multiple chip regions may be without a second wavelength band transmitter and include a path for receiving the second wavelength band signals from another chip.

Abstract: A method for aligning chip regions.

Abstract: A method and a high-frequency module that includes a high frequency die that may include multiple die pads; a substrate that may include a first buildup layer, a second buildup layer and a core that is positioned between the first buildup layer and a second buildup layer; a line card that may include multiple line card pads; and multiple conductors that pass through the substrate without reaching a majority of a depth of the core, and couple the multiple die pads to the multiple line card pads.

Abstract: A device and a method for aligning a laser unit to a waveguide unit. The method may include (a) placing the laser unit in a tested position in which the laser unit faces the waveguide unit; (b) supplying light, via a coupler of the waveguide unit, to an alignment waveguide of the waveguide unit; (c) receiving light emitted from the alignment waveguide; wherein the light was emitted as result of the supplying of the light; (d) determining whether the light emitted from the alignment comprises a spectral signature associated with an alignment unit of the laser unit; and (e) estimating whether the laser unit is aligned to the waveguide unit based on the determining of step (d).

Abstract: A method and a high-frequency module that includes (a) a high frequency die that includes multiple die pads, (b) a substrate that comprises a first buildup layer, a second buildup layer and a core that is positioned between the first buildup layer and a second buildup layer, (c) a heat sink and coupling module that comprises a heat sink and multiple first conductors that pass through the heat sink and extend outside the heat sink; (d) a line card that comprises multiple line card pads that are coupled to external ends of the multiple first conductors; (e) coupling elements that are coupled to internal end of the multiple first conductors; and (f) multiple second conductors that pass through the substrate without reaching a majority of a depth of the core, and couple the multiple die pads to the coupling elements. The high frequency it not lower than fifty gigabits per second.