Patents Assigned to Dynaloy, LLC
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Publication number: 20170293228Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include a quaternary ammonium hydroxide an amine, and optionally a corrosion inhibitor and/or a sugar alcohol. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the substrate.Type: ApplicationFiled: April 12, 2016Publication date: October 12, 2017Applicant: Dynaloy, LLCInventors: Richard Dalton Peters, Travis W. Acra, Kimberly Dona Pollard
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Patent number: 9650594Abstract: The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise.Type: GrantFiled: January 22, 2015Date of Patent: May 16, 2017Assignee: Dynaloy, LLCInventors: Travis Acra, Richard Dalton Peters, Kimberly Dona Pollard, Donald James Pfettscher
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Publication number: 20160215240Abstract: The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise.Type: ApplicationFiled: January 22, 2015Publication date: July 28, 2016Applicant: Dynaloy, LLCInventors: Travis Acra, Richard Dalton Peters, Kimberly Dona Pollard, Donald James Pfettscher
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Patent number: 9329486Abstract: The disclosure is directed solutions and processes to remove substances from substrates. The substances can include photoresist. The solutions can include dimethylsulfoxide, a quaternary ammonium hydroxide, an alkanolamine, and less than 3% by weight water of a total weight of the solution. The quaternary ammonium hydroxide can include tetramethylammonium hydroxide, dimethyldipropylammonium hydroxide, or methyltriethylammonium hydroxide. Additionally, the solutions can include a secondary solvent. For example, the secondary solvent can include an alcohol. In another example, the secondary solvent can include ethylene glycol. Methods for the preparation and use of the solution to remove substances from substrates are also described.Type: GrantFiled: February 6, 2014Date of Patent: May 3, 2016Assignee: Dynaloy, LLCInventors: Michael Tod Phenis, Lauri Johnson, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard
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Patent number: 9291910Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.Type: GrantFiled: September 27, 2013Date of Patent: March 22, 2016Assignee: Dynaloy, LLCInventors: Richard Dalton Peters, Travis W. Acra, Yuanmei Cao, Nichelle Maria Gilbert, Michael Tod Phenis, Kimberly Dona Pollard, Joshua Cummins, Meng Guo, Donald James Pfettscher
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Patent number: 9243218Abstract: Methods for using improved stripper solutions having dimethyl sulfoxide; a quaternary ammonium hydroxide; an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, with the amino and hydroxyl substituents being attached to two different carbon atoms; and a surfactant. Some formulation can additionally contain a secondary solvent. The stripper solutions are effective for removing photoresists from substrates, and typically have freezing points below about +15° C. and high loading capacities.Type: GrantFiled: December 15, 2009Date of Patent: January 26, 2016Assignee: Dynaloy, LLCInventors: Michael T. Phenis, Lauri Kirby Kirkpatrick, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard
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Publication number: 20150325442Abstract: Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant can include arsenic (As) or phosphorus (P). In an embodiment, a dopant solution is provided that includes a solvent and a dopant-containing molecule. In a particular embodiment, the solvent of the dopant solution can have a flashpoint that is at least 55° C. In some cases, the dopant-containing molecule can have a molecular weight that is no greater than about 300 g/mol. In other instances, a ratio of a concentration of a dopant-containing molecule relative to a concentration of a contaminant is no greater than about 1×1010.Type: ApplicationFiled: May 7, 2014Publication date: November 12, 2015Applicant: Dynaloy, LLCInventors: Monika Karin Wiedmann, Keith Allen Cox, Leslie Shane Moody, Junjia Liu, Jessica Tanuwidjaja, Kimberly Dona Pollard, Kathryn Marie Kornau, Spencer Erich Hochstetler
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Patent number: 9158202Abstract: Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices.Type: GrantFiled: March 15, 2013Date of Patent: October 13, 2015Assignee: Dynaloy, LLCInventors: Richard Dalton Peters, Travis Acra, Yuanmei Cao, Spencer Erich Hochstetler, Michael Tod Phenis, Kimberly Dona Pollard
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Publication number: 20150219996Abstract: Stripping compositions are described that are useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays. The stripping compositions may be suitable for removing photoresists, including acrylic-based negative dry film photoresist, from electronic devices. In one embodiment, the stripping compositions can include a polar protic solvent, an amine or alkanoamine, and a quaternary ammonium hydroxide. In one embodiment the stripping compositions can include a polar protic solvent and at least two alkanoamines. The stripping compositions may be free of polar aprotic solvents.Type: ApplicationFiled: February 6, 2014Publication date: August 6, 2015Applicant: Dynaloy, LLCInventors: Richard Dalton Peters, Travis Acra, Yuanmei Cao, Nichelle Maria Gilbert, Michael Tod Phenis, Kimberly Dona Pollard, Joshua Cummins, Meng Guo, Donald James Pfettscher
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Patent number: 9069259Abstract: Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, a secondary solvent, and less than about 3 wt. % water. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.Type: GrantFiled: February 5, 2013Date of Patent: June 30, 2015Assignee: Dynaloy, LLCInventors: Michael Phenis, Laurl Johnson, Raymond Chan, Diane Scheele, Kimberly Pollard
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Publication number: 20150133356Abstract: A process for cleaning a semi-conductor wafer comprising providing etched wafer containing metal pillars, contacting the etched wafer with a cleaning solution, removing the wafer from the cleaning solution, wherein the resulting wafer is substantially free of post etch residues and photoresist residues without etching the metal pillars by the cleaning solution, the cleaning solution comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; and E. an organic base comprising an amine compound. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.Type: ApplicationFiled: January 21, 2015Publication date: May 14, 2015Applicant: Dynaloy, LLCInventors: Kimberly Dona Pollard, Donald James Pfettscher, Meagan Hatfield, Spencer Erich Hochstetler, Nichelle Maria Gilbert, Michael Tod Phenis
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Patent number: 9029268Abstract: Processes are described to etch metals. In an embodiment, a process may include contacting a substrate with a stripping solution to remove photoresist from the substrate to produce a stripped substrate. The stripped substrate may include a plurality of solder pillars and a plurality of metal-containing field regions disposed around the plurality of solder pillars. In an illustrative embodiment, the plurality field regions may include copper. Additionally, the process may include rinsing the stripped substrate to produce a rinsed substrate. The rinsed substrate may be substantially free of a Sn layer or a Sn oxide layer. Further, the process may include contacting the rinsed substrate with an etch solution that is capable of removing an amount of one or more metals from the plurality of field regions.Type: GrantFiled: November 21, 2012Date of Patent: May 12, 2015Assignee: Dynaloy, LLCInventors: Richard Dalton Peters, Travis Acra, Spencer Erich Hochstetler, Kimberly Dona Pollard
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Patent number: 9012387Abstract: Resist stripping agents useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits and/or liquid crystals with reduced metal and metal alloy etch rates (particularly copper etch rates and TiW etch rates), are provided with methods for their use. The preferred stripping agents contain low concentrations of resorcinol or a resorcinol derivative, with or without an added copper salt, and with or without an added amine to improve solubility of the copper salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: GrantFiled: August 15, 2013Date of Patent: April 21, 2015Assignee: Dynaloy, LLCInventors: John Atkinson, Kimberly Dona Pollard, Gene Goebel
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Publication number: 20150094249Abstract: The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution.Type: ApplicationFiled: September 27, 2013Publication date: April 2, 2015Applicant: Dynaloy, LLCInventors: Richard Dalton Peters, Travis W. Acra, Yuanmei Cao, Nichelle Maria Gilbert, Michael Tod Phenis, Kimberly Dona Pollard, Joshua Cummins, Meng Guo, Donald James Pfettscher
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Patent number: 8987181Abstract: A photoresist and post etch cleaning solution for semiconductor wafers comprising: A. a polar aprotic solvent, B. an inorganic base; C. a co-solvent for said inorganic base; D. a unsaturated cycloaliphatic compound having a ring ether group and at least one substituent bearing a primary hydroxyl group; E. an organic base comprising an amine compound; and F. a nonionic surfactant bearing at least one ether group. The wafer containing photoresist residue or post etch residue can be cleaned by contacting the solution in a spray or immersion.Type: GrantFiled: October 15, 2012Date of Patent: March 24, 2015Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, Donald Pfettscher, Meagan Hatfield, Spencer Erich Hochstetler, Nichelle M. Wheeler, Michael T. Phenis
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Patent number: 8906774Abstract: Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.Type: GrantFiled: March 8, 2011Date of Patent: December 9, 2014Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, Allison C. Rector
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Patent number: 8853438Abstract: Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.Type: GrantFiled: November 5, 2012Date of Patent: October 7, 2014Assignee: Dynaloy, LLCInventors: Spencer Erich Hochstetler, Kimberly Dona Pollard, Leslie Shane Moody, Peter Borden Mackenzie, Junjia Liu
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Patent number: 8835290Abstract: Compositions and methods for doping silicon substrates by treating the substrate with a diluted dopant solution comprising tetraethylene glycol dimethyl ether (tetraglyme) and a dopant-containing material and subsequently diffusing the dopant into the surface by rapid thermal annealing. Diethyl-1-propylphosphonate and allylboronic acid pinacol ester are preferred dopant-containing materials, and are preferably included in the diluted dopant solution in an amount ranging from about 1% to about 20%, with a dopant amount of 4% or less being more preferred.Type: GrantFiled: May 2, 2013Date of Patent: September 16, 2014Assignee: Dynaloy, LLCInventors: Kimberly Dona Pollard, Allison C. Tonk
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Publication number: 20140155310Abstract: The disclosure is directed solutions and processes to remove substances from substrates. The substances can include photoresist. The solutions can include dimethylsulfoxide, a quaternary ammonium hydroxide, an alkanolamine, and less than 3% by weight water of a total weight of the solution. The quaternary ammonium hydroxide can include tetramethylammonium hydroxide, dimethyldipropylammonium hydroxide, or methyltriethylammonium hydroxide. Additionally, the solutions can include a secondary solvent. For example, the secondary solvent can include an alcohol. In another example, the secondary solvent can include ethylene glycol. Methods for the preparation and use of the solution to remove substances from substrates are also described.Type: ApplicationFiled: February 6, 2014Publication date: June 5, 2014Applicant: Dynaloy, LLCInventors: Michael Tod Phenis, Lauri Johnson, Raymond Chan, Diane Marie Scheele, Kimberly Dona Pollard
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Publication number: 20140138353Abstract: A process is described to perform lift-off of a metal layer. A spray is applied to a patterned surface coated with the metal layer. An incidence angle and pressure of the spray are sufficient to separate the metal layer from a substance coated with the metal without separating the substance from an underlying substrate.Type: ApplicationFiled: November 21, 2012Publication date: May 22, 2014Applicant: DYNALOY, LLCInventors: Richard Dalton Peters, Keith Allen Cox