Abstract: A heating and cooling device includes a conductive structure, an electric heating pipe and a housing. The housing has a main body and a test space formed in the main body, the electric heating pipe is attached on the main body and used for heating a testing plastic material in the test space, and the housing is covered outside the conductive structure and separated from the main body to form a cooling flow channel. The housing and the main body are separated without contacting each other, so that the dissipation of the heat energy of the electric heating pipe through the housing can be reduced in the heating process, and the function of thermal preservation can be provided. Moreover, the cooling effect can be improved through the larger cooling flow channel during the cooling process. A PVT equipment using the heating and cooling device is further provided.

Abstract: An apparatus for measuring a degree of cure and a specific volume of a packaging material is provided, including: an upper load module configured for driving the rotation of an upper ball screw via an upper servo motor such that a force plate coupled to the upper ball screw moves downward and is thus positioned; a lower load module having a lower ball screw operating and moving via a lower servo motor such that a load joint group connected to the lower ball screw generates a corresponding displacement; an upper film cavity module connected to the upper load module; and a lower film cavity module disposed on the lower load module. The displacement of the load joint group enables a push rod to move upward. A heating pipe keeps constant the temperature of a subject to be measured in a cavity of the lower film cavity module.

Abstract: The present invention discloses methods and apparatuses for substrate singulation. Embodiments of the present invention comprise cryogenic-assist scribing or cutting mechanism for debris reduction, preferably cryogenic-assist laser scribe or cutting; controlling mechanism for debris flow and redeposition during laser process; and integrated, dry debris removal scribing process with breaking mechanism. An exemplary embodiment comprises an integrated housing for aligning a laser beam with the cryogenic cleaning beam. The integrated housing is preferably made of low thermal conductivity material to provide a high temperature gradient between the low temperature of the cryogenic fluid and the ambient temperature, preventing condensation of the moisture. The entire areas, or the critical areas of the apparatus can also be purged with flowing “dry” inert gases to further reduce the condensation moisture. Reactive gas can be introduced to react with debris, converting into gaseous form for ease of removal.

Abstract: An apparatus and method for breaking a semiconductor wafer along scribe lines to separate individual die. A scribe line of the wafer is aligned with a straight, elongated pyramid-shaped edge of a precision bending bar, and a compressive force is applied to the surface of the wafer by a compressive member to bend the wafer over the edge and break the wafer along the scribe line.

Abstract: The present invention relates in a first aspect to a cut-resistant and/or cut-warning composite comprising a matrix, provided on one side of a fabric, a fabric, and at least one insulating layer provided between said matrix and said fabric. In another aspect, the invention relates to a composite, whereby cavities are provided between the individual elements of said fabric. In another aspect, the present invention relates to a method for preventing vandalism on a composite. In another aspect, the invention relates to the use of a composite according to the present invention as an anti-vandalism composite.

Abstract: Apparatus for automatic scribing and breaking of semiconductor wafers wherein scribing is performed at a scribing station and the scribed wafer transported in the X direction to a breaking station on an X-Y table. Scribing and breaking of parallel lines is accomplished by transporting the wafer step-wise in the Y direction by the Y table. Rotation of the wafer for scribing and breaking along sets of lines perpendicular to one another is accomplished by a theta table carried on the Y table. An impulse bar is carried by the X table for applying force to the bottom surface of the wafer during both scribing and breaking. In one embodiment, upward movement of the wafer during breaking is resisted by an anvil positioned above the wafer. In a second embodiment, such upward movement is resisted by a vacuum chuck beneath the wafer, to avoid contact with the upper wafer surface.

Abstract: In a plating process for constructing a nickel/embedded abrading particle saw blade on a saw blade substrate, the step of plating abrading particles onto and within the supporting copper substrate is disclosed. The beveled edge of a circular aluminum saw blade blank is first coated with a thin zinc layer. Thereafter, copper and abrading particles are plated followed by conventional abrading particle and nickel plating. Conventional material removal thereafter follows at the saw blade side adjacent the circular saw blade blank, saw blade edge, and copper layer. With removal of the copper layer, abrading particles originally partially embedded in the copper layer are exposed for cutting. The need for electro-polishing and garnating is eliminated in so far as exposure of abrading particles is concerned. The final saw blade product produced has uniform cutting edges on both sides with less likelihood of producing edge fractures, chips, or cracks in silicon wafers during separation.

Abstract: In a plating process for constructing a nickel embedded abrading particle saw blade on a saw blade substrate, the step of plating abrading particles onto and within the supporting copper substrate is disclosed. The beveled edge of a circular aluminum saw blade blank is first coated with a thin zinc layer. Thereafter, copper and abrading particles are plated followed by conventional abrading particle and nickel plating. Conventional material removal thereafter follows at the saw blade side adjacent the circular saw blade blank, saw blade edge, and copper layer. With removal of the copper layer, abrading particles originally partially embedded in the copper layer are exposed for cutting. The need for electro-polishing and garnating is eliminated in so far as exposure of abrading particles is concerned. The final saw blade product produced has uniform cutting edges on both sides with less likelihood of producing edge fractures, chips, or cracks in silicon wafers during separation.