Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Abstract: A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus is disclosed. The substrate treatment apparatus has an electrostatic chuck mechanism, a grounding mechanism, and an electron beam radiating mechanism. The electrostatic chuck mechanism electrostatically sucks and holds a substrate under treatment. The grounding mechanism freely contacts a predetermined film of a plurality of films formed on a treatment surface of the substrate under treatment sucked and held by the electrostatic chuck mechanism. The electron beam radiating mechanism radiates a resist film formed on the treatment surface side of the substrate under treatment with an electron beam.

Abstract: A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading/unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading/unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere.

Abstract: A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading/unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading/unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere.

Abstract: A substrate treatment apparatus that treats a substrate under treatment has an interface section, a substrate loading/unloading section, a reduced pressure atmosphere conveyance chamber, and an exposure treatment chamber. The interface section has a conveyance mechanism that can freely load and unload the substrate under treatment from another device into the apparatus or vice versa. The substrate under treatment can be loaded and unloaded into and from the substrate loading/unloading section in one direction by the conveyance mechanism of the interface section. The reduced pressure atmosphere conveyance chamber is disposed adjacent to and perpendicular to the direction of the substrate loading/unloading section and has a conveyance mechanism that conveys the substrate under treatment under a reduced pressure atmosphere.

Abstract: A method the electron-beam irradiation of gemstones for uniform color enhancement requiring an electron-beam source having a capacity of 500 kW generating energy of between 3 MeV to 50 MeV. The method requires the gemstones to be moved in and out of the electron-beam path with the electron-beam source also being oscillated but in a direction ninety degrees opposed to the gemstones. Cooling means for the gemstones are also required to prevent heat stress cracking. Gemstones such as beryl, diamonds, quartz, sapphires, tourmaline, dark pearls and other minerals are suitable. More particularly the method relates to the treatment of topaz.