Abstract: Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.