Publication number: 20130000709
Abstract: Photovoltaic cells including silicon solar cells are provided. A silicon substrate having an n-type silicon layer is provided with a silicon nitride layer, a reactive metal in contact with said silicon nitride layer, and a non-reactive metal in contact with the reactive metal. This assembly is fired to form a low Shottky barrier height contact comprised of metal nitride, and optionally metal silicide, on the silicon substrate, and a conductive metal electrode in contact with said low Shottky barrier height contact. The reactive metal may be titanium, zirconium, hafnium, vanadium, niobium, and tantalum, and combinations thereof, and the non-reactive metal may be silver, tin, bismuth, lead, antimony, arsenic, indium, zinc, germanium, nickel, phosphorus, gold, cadmium, berrylium, and combinations thereof.
Type:
Application
Filed:
September 14, 2012
Publication date:
January 3, 2013
Applicant:
E I DU PONT DE NEMOURS AND COMPANY NORTH CAROLINA STATE UNIVERSITY
Inventors:
WILLIAM J. BORLAND, Jon-Paul Maria