Abstract: An EUV mask inspection device includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern; and an EUV lighting unit for creating EUV illumination light by obtaining 1st diffraction light reflected after radiating EUV light output from the EUV light source to the multilayer reflection zone plate. The EUV mask inspection device further includes: an aperture for providing monochromatic light or reducing a light radiation area by reducing a linewidth of optical wavelength radiated from the EUV lighting unit; a transmissive zone plate for forming expanded light by collecting reflected or scattered light after radiating light passing through the aperture to the EUV mask; and an image sensor for measuring intensity of light through EUV mask measured light.

Abstract: A high performance EUV microscope device with a freeform illumination system having an elliptical mirror, includes: an EUV source for outputting EUV light; a spherical mirror having a two-axis driving unit which receives and reflects the EUV light output from the EUV light source and controls a reflection direction of the incident light through two-axis angle scanning; an optical path changing means for receiving the reflected light reflected from the spherical mirror and providing illumination light to a target object to be measured; a zone plate lens for focusing the light reflected after entering the target object; and a photodetector for receiving the light focused by the zone plate lens.

Abstract: A high-performance EUV microscope with a free form illumination system, includes: an EUV light source that outputs EUV light; one spherical mirror, which receives and reflects the EUV light outputted from the EUV light source and includes a two-axis drive part for controlling reflection direction of incident light through two-axis angle scan; one plane mirror, which receives the reflected light reflected from the spherical mirror and provides illumination light to a measurement target, and in which a plurality of mirror cells are arranged at each angle; a zone plate lens for focusing measurement light, which is the illumination light formed through the plane mirror and incident on the measurement target and then reflected; and a photodetector for receiving the measurement light focused by the zone plate lens, wherein a reflection angle of the spherical mirror and a reflection angle of the plane mirror are selectively controlled, respectively.

Abstract: An EUV lighting device for metrology and inspection of an EUV mask in an EUV exposure process of a semiconductor device manufacturing process includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; and a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern. The EUV lighting device radiates EUV light output from the EUV light source to the multilayer reflection zone plate, acquires 1st diffraction light reflected, and creates EUV illumination light.

Abstract: An extreme ultraviolet (EUV) light source device for generating EUV light through a plasma reaction, includes: a focusing lens for focusing a laser beam generated from a laser source; a vacuum chamber for providing a vacuum environment to generate the laser beam focused on the focusing lens as the EUV light through the plasma reaction; a gas jet nozzle for supplying a plasma reaction gas to the laser beam focused on the focusing lens to generate the EUV light; and a gas supply part for supplying the plasma reaction gas to the gas jet nozzle from the outside.

Abstract: The present invention relates to an EUV light generation device including: a laser beam irradiated on a target material droplet; and a focusing mirror for focusing the EUV light generated through the plasma emitted by means of the irradiation of the laser beam on the droplet, wherein the focusing mirror has a concaved operating surface and a focusing point formed at a position facing the operating surface, and the laser beam and a focusing lens for focusing the laser beam are located at the positions facing the operating surface of the focusing mirror, so that the focusing point, the laser beam, and the focusing lens are located on the positions facing the operating surface, that is, on one side of the operating surface.

Abstract: The present invention relates to an EUV light generation device including: a laser beam irradiated on a target material droplet; and a focusing mirror for focusing the EUV light generated through the plasma emitted by means of the irradiation of the laser beam on the droplet, wherein the focusing mirror has a concaved operating surface and a focusing point formed at a position facing the operating surface, and the laser beam and a focusing lens for focusing the laser beam are located at the positions facing the operating surface of the focusing mirror, so that the focusing point, the laser beam, and the focusing lens are located on the positions facing the operating surface, that is, on one side of the operating surface.

Abstract: A manufacturing method includes the steps of: (a) preparing a lower layer member having a first base layer, a first protective thin film, and a first CNT thin film; (b) preparing a first upper layer member having a second base layer, a second protective thin film, and a second CNT thin film or a second upper layer member having a second base layer and a second protective thin film; (c) arranging the lower layer member above the first CNT thin film; (d) forming a group member by arranging the second CNT thin film of the first upper layer member or the second protective film of the second upper layer member to be stacked on the first CNT thin film; and € removing the second base layer from the group member.

Abstract: An EUV lighting device for metrology and inspection of an EUV mask in an EUV exposure process of a semiconductor device manufacturing process includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; and a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern. The EUV lighting device radiates EUV light output from the EUV light source to the multilayer reflection zone plate, acquires 1st diffraction light reflected, and creates EUV illumination light.

Abstract: A manufacturing method includes the steps of: (a) preparing a lower layer member having a first base layer, a first protective thin film, and a first CNT thin film; (b) preparing a first upper layer member having a second base layer, a second protective thin film, and a second CNT thin film or a second upper layer member having a second base layer and a second protective thin film; (c) arranging the lower layer member above the first CNT thin film; (d) forming a group member by arranging the second CNT thin film of the first upper layer member or the second protective film of the second upper layer member to be stacked on the first CNT thin film; and € removing the second base layer from the group member.

Abstract: An EUV mask inspection device includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern; and an EUV lighting unit for creating EUV illumination light by obtaining 1st diffraction light reflected after radiating EUV light output from the EUV light source to the multilayer reflection zone plate. The EUV mask inspection device further includes: an aperture for providing monochromatic light or reducing a light radiation area by reducing a linewidth of optical wavelength radiated from the EUV lighting unit; a transmissive zone plate for forming expanded light by collecting reflected or scattered light after radiating light passing through the aperture to the EUV mask; and an image sensor for measuring intensity of light through EUV mask measured light.

Abstract: An EUV lighting device for metrology and inspection of an EUV mask in an EUV exposure process of a semiconductor device manufacturing process includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; and a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern. The EUV lighting device radiates EUV light output from the EUV light source to the multilayer reflection zone plate, acquires 1st diffraction light reflected, and creates EUV illumination light.

Abstract: A reflectivity and transmittance measuring device includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern; and an EUV lighting unit for creating EUV illumination light by obtaining 1st diffraction light reflected after radiating EUV light output from the EUV light source to the multilayer reflection zone plate.