Patents Assigned to E. T. Plasma, Inc.
  • Continuous gas plasma etching apparatus and method
    Patent number: 4624738
    Abstract: A method and apparatus are disclosed for continuous plasma etching of generally planar workpieces in which the workpieces are introduced into an evacuated chamber containing the plasma, are carried along a continuous processing path and are removed therefrom. The plasma is generated within the chamber and the workpieces are supported within an electrically neutral field within the processing plasma.
    Type: Grant
    Filed: July 12, 1985
    Date of Patent: November 25, 1986
    Assignee: E. T. Plasma, Inc.
    Inventors: Raymond T. Westfall, Erich J. Feldl