Abstract: Producing a vertical transistor includes providing a substrate including a gate material layer stack with a reentrant profile. A patterned deposition inhibiting material is deposited over a portion of the gate material layer stack and over a portion of the substrate. An electrically insulating material layer is deposited over a portion of the gate material layer stack and over a portion of the substrate using a selective area deposition process in which the electrically insulating material layer is not deposited over the patterned deposition inhibiting material. A semiconductor material layer is deposited over the electrically insulating material layer.

Abstract: A recirculating document feeder for presenting document sheets to a copier apparatus for reproducing multiple collated sets of information respectively contained on one face of such document sheets, or information respectively contained on both faces of such sheets, at a rate which makes maximum use of the full reproduction rate of the copier apparatus. In the recirculating document feeder, during the first circulation of a set of document sheets, after both sides of each sheet are exposed to reproduce information contained thereon, such sheets are returned to the hopper with their facial orientation reversed with respect to their initial facial orientation in the hopper. During all during subsequent circulations of such document sheets except the last circulation, after both sides of each sheet are exposed to reproduce information contained thereon, such sheets are returned to the hopper with the facial orientation reversed with respect to their initial facial orientation in the hopper.