Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: The present invention provides a system for self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. This alloy of silver and silicon is the final contact material, and is composed of eutectic proportions of silicon and silver. Under eutectic proportions there is significantly more silver than silicon in the final contact material, thereby insuring good electrical conductivity of the final contact material.

Abstract: The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature.

Abstract: The present invention provides a system and method for creating self-doping contacts to silicon devices in which the contact metal is coated with a layer of dopant and subjected to high temperature, thereby alloying the silver with the silicon and simultaneously doping the silicon substrate and forming a low-resistance ohmic contact to it. A self-doping negative contact may be formed from unalloyed silver which may be applied to the silicon substrate by either sputtering, screen printing a paste or evaporation. The silver is coated with a layer of dopant. Once applied, the silver, substrate and dopant are heated to a temperature above the Ag—Si eutectic temperature (but below the melting point of silicon). The silver liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature.

Abstract: A process for dendritic web growth is described. The process includes providing a melt, growing a dendritic web crystal from the melt, replenishing the melt during the step of growing the dendritic web crystal, and applying a magnetic field to the melt during the step of growing the dendritic web crystal. An apparatus for stabilizing dendritic web growth is also described. The apparatus includes a crucible including a feed compartment for receiving pellets to facilitate melt replenishment and a growth compartment designed to hold a melt for dendritic web growth. The apparatus further includes a magnetic field generator configured to provide a magnetic field during dendritic web growth.

Abstract: An apparatus and method is provided for manufacturing a semiconductor substrate such as web crystals. The apparatus includes a chamber and a growth hardware assembly housed within the chamber. A magnetic field system produces a vertical magnetic field within the chamber.

Abstract: A process for dendritic web growth is described. The process includes providing a melt, growing a dendritic web crystal from the melt, replenishing the melt during the step of growing the dendritic web crystal, and applying a magnetic field to the melt during the step of growing the dendritic web crystal. An apparatus for stabilizing dendritic web growth is also described. The apparatus includes a crucible including a feed compartment for receiving pellets to facilitate melt replenishment and a growth compartment designed to hold a melt for dendritic web growth. The apparatus further includes a magnetic field generator configured to provide a magnetic field during dendritic web growth.

Abstract: A process for fabricating a solar cell is described. The process includes: (1) providing a base layer, (2) fabricating an emitter layer of p-type conductivity on a same side as the non-illuminated surface of the base layer to provide a strongly doped p-type emitter layer and a p-n junction between the n-type base layer and the p-type emitter layer. The base layer of the present invention has n-type conductivity and is defined by an illuminated surface and a non-illuminated surface. The illuminated surface has light energy impinging thereon when the solar cell is exposed to the light energy and the non-illuminated surface is opposite the illuminated surface.

Abstract: A self-doping electrode to silicon is formed primarily from a metal (major component) which forms a eutectic with silicon. A p-type dopant (for a positive electrode) or an n-type dopant (for a negative electrode) is alloyed with the major component. The alloy of major component and dopant is applied to a silicon substrate. Once applied, the alloy and substrate are heated to a temperature above the major component-silicon eutectic temperature such that the major component liquefies more than a eutectic proportion of the silicon substrate. The temperature is then decreased towards the eutectic temperature permitting molten silicon to reform through liquid-phase epitaxy and while so doing incorporate dopant atoms into its regrown lattice. Once the temperature drops below the major component-silicon eutectic temperature the silicon, which has not already regrown into the lattice, forms a solid-phase alloy with the major component and the remaining unused dopant.

Abstract: A dendritic web formation process and apparatus for diffusing dopant impurities into a growing dendritic crystal web to produce photovoltaic cells. A solid dopant diffusion source is arranged in a holder mounted in a vertical thermal element either within the melt furnace or outside the furnace adjacent the furnace exit port. The solid diffusion source is heated by thermal conduction from the vertical thermal element and source holder using the furnace heat as a source. Auxiliary heater coils are optionally provided around the vertical thermal element to control the temperature of the solid diffusion source. The source and holder can also be mounted outside the furnace adjacent the exit port and heated using a secondary rapid temperature external heater. The growing dendritic crystal web is exposed to the dopant impurities as part of the web growing process, eliminating the need for a separate diffusion gaseous station and processing.

Abstract: A method and system for controlling the thickness of a pair of dendrites in a dendritic silicon web growth process to improve dendritic silicon web production. An image of each dendrite in a web emerging from a silicon melt in a furnace is produced by a pair of cameras focused on the dendrite pair. The dendrite images are digitized, the average thickness of the dendrites is calculated, and compared to set point parameters. The average difference between the dendrite thicknesses and the set point parameters is used to control the overall furnace temperature, while the differences between the thickness of each pair are used to control the lateral temperature distribution in the furnace in order to maintain the dendrite thickness within predetermined limits.

Abstract: The amount of silicon feed material supplied to a silicon melt furnace in a silicon crystal web growing installation is controlled by providing a melt level reference signal, generating a melt level signal representative of the level of the molten silicon in the silicon melt furnace, and providing a feed rate control signal representative of the difference between the melt level signal and the melt level reference signal. The feed rate control signal is used in a open loop mode to advise an operator of the amount of adjustment needed to correct the melt level; and is used in a closed loop mode to control the feed rate of the silicon feed material to the furnace. The laser beam reflected off the melt surface is passed through a narrow bandpass filter to remove noise due to thermal radiation from the furnace. The melt level signals generated by a position detector are averaged and digitally filtered to eliminate erroneous data caused by mechanical vibrations and other noise sources.

Abstract: A silicon pellet feed system for use with a silicon melt furnace used to grow a silicon web. A reservoir for containing feed particles is coupled to the upper end of a feed tube. The lower end of the feed tube is positioned adjacent a pair of rotatable drive rollers driven by a motor through a coupling and a pair of gears. The rollers are mounted at an angle with respect to horizontal and the outlet end of the roller feed path is located above a delivery tube leading to the silicon melt furnace. The elements are surrounded by an enclosure having a vacuum outlet for enabling the enclosure to be evacuated to a working vacuum level and a gas inlet for enabling an inert gas to be back filled into the enclosure. The feed rate is determined by the angle of the drive rollers, the speed of the motor and the shape of the bottom end of the feed tube. The rollers are resilient to provide enhanced surface friction for the particle flow and to prevent trapped feed particles from jamming the motor.

Abstract: A solar cell having self-aligned metal electrodes and underlying relatively deep emitter regions joined by relatively shallow emitter regions under the surface not covered by the electrodes is formed in a semiconductive substrate by forming relatively shallow p+ and n+ diffusion regions on the front and back surfaces, respectively, of a silicon semiconductive substrate, screen printing aluminum onto the front surface of the substrate in a desired electrode pattern, heat treating the developing cell to form the relatively deep p+ type emitter regions underneath the electrode pattern, while growing an oxide passivation layer over the uncovered portions of the substrate surface, applying an antireflective coating to the front surface in the regions not covered by the electrodes, and screen printing silver over the electrodes on the front surface and over the back surface of the solar cell.

Abstract: A method for treating thin silicon web crystals used to produce solar cells in order to remove complex SiOx contaminants from the web after growth. A dendritic silicon web with {111} surface orientation is immersed in a caustic solution of KOH or NaOH at a temperature at a range from about 80 to about 85.degree. C. for a period of about five to about ten minutes. The caustic solution quickly removes the SiOx contaminants, while leaving relatively unaffected the silicon crystal in the surface. After the caustic solution treatment, the web is rinsed in deionized water and optionally subjected to an acid cleaning with HCL or HF in order to remove any residual contaminants on the web surface.

Abstract: An improved solar cell design and method of fabrication that primarily uses two materials, n-type doped silicon and aluminum to form a p-n alloy junction back contact solar cell. The aluminum alloy junctions are placed on the back (unilluminated) side of the cell, thereby combining the desirable features of aluminum (as a dopant, contact metal and light reflector), with the advantages of a back contact cell. The cell design and method of fabrication includes such features as surface texturing, front and back surface field minority carrier mirrors, surface passivation using oxidation layers, use of Al contacts as light reflectors, intrinsic protection against reverse bias due to contiguous n.sup.+ and p.sup.+ regions, and an improved bus bar contact design suitable for interconnecting cells using a surface mount technology. An improved method of ohmic contact formation uses a self-alignment technique for forming the ohmic contacts.