Abstract: The invention provides a vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof.

Abstract: The invention provides a pad removal apparatus and method that enables improved pad removal from a platen.

Abstract: The invention provides a chemical mechanical polishing and pad dressing method based on differing the rotational of a pad dresser, head, and/or polishing pad to improve center removal slow profiling.

Abstract: A chemical mechanical processing apparatus includes a polishing pad capable of polishing a substrate; a stepped retaining having an inner side, a bottom side, and an open region, the open region extending radially outward from the inner side and upward from the bottom side, the open region providing space for pad rebound, the open region further having a plurality of tips to hold a substrate in position during rotation of the substrate against the polishing pad, the stepped retaining ring capable of rotating the substrate against the polishing pad; and a dispenser capable of dispensing a slurry onto the pad.

Abstract: The system includes a polishing pad, a pad height sensor; a window; and a window raising mechanism. The polishing pad has an aperture with the window vertically moveable therein. The pad height sensor is positioned above the polishing pad and measures the vertical position of the pad before polishing. The window raising mechanism adjusts the vertical position of the window based on information from the pad height sensor. An endpoint measurement sensor can be disposed beneath the window for in-situ measurement of the polishing process.

Abstract: The system includes a polishing pad, a pad height sensor; a window; and a window raising mechanism. The polishing pad has an aperture with the window vertically moveable therein. The pad height sensor is positioned above the polishing pad and measures the vertical position of the pad before polishing. The window raising mechanism adjusts the vertical position of the window based on information from the pad height sensor. An endpoint measurement sensor can be disposed beneath the window for in-situ measurement of the polishing process.

Abstract: The invention provides a vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof.

Abstract: The invention provides a chemical mechanical polishing pad and method that enables improved wafer removal from the polishing pad after completion of chemical mechanical polishing of the wafer.

Abstract: The invention provides a chemical mechanical polishing and pad dressing method based on differing the rotational of a pad dresser, head, and/or polishing pad to improve center removal slow profiling.

Abstract: A chemical mechanical processing apparatus includes a polishing pad capable to polish a substrate; a stepped retaining having an inner side, a bottom side, and an open region, the open region extending radially outward from the inner side and upward from the bottom side, the open region providing space for pad rebound, the open region further having a plurality of tips to hold a substrate in position during rotation of the substrate against the polishing pad, the stepped retaining ring capable to rotate the substrate against the polishing pad; and a dispenser capable to dispense a slurry onto the pad.

Abstract: Methods and apparatus for partial regeneration of a cryopump are provided. The cyropump includes first and second stage cryoarrays, a refrigerator for cooling the first and second stage cryoarrays, and typically includes a sorbent material for removing gases by cryosorption. The second stage cryoarray is heated from its operating temperature to a partial regeneration temperature range selected to liberate captured gas from the second stage cryoarray and to retain condensed water vapor on the first stage cryoarray. The partial regeneration temperature range is preferably 100K to 160K and is more preferably 120K to 140K. When the second stage cryoarray has a temperature within the partial regeneration temperature range, gas liberated from the second stage cryoarray is pumped with a turbomolecular pump in fluid communication with the cryopump. The turbomolecular pump removes liberated gases from the cryopump at high speeds and produces a low pressure in the cryopump.

Abstract: Apparatus and method for vacuum pumping an enclosed chamber includes a cryogenic pumping device in fluid communication with the chamber for removing gases from the chamber. The cryogenic pumping device includes a cooled pumping surface and an expander for expanding a compressed gas and thereby cooling the pumping surface. The vacuum pumping apparatus further includes a sensor for sensing an operating parameter, such as temperature, of the cryogenic pumping device and a controller responsive to the sensor for controlling the operating speed of the expander to produce a desired value of the operating parameter. Typically, the sensor is a temperature sensor, and the controller controls the speed of the expander motor.

Abstract: Apparatus for vacuum pumping an enclosed chamber without the use of activated charcoal to remove hydrogen by cryosorption. As a result, the potential for contamination by a sorbent material is eliminated. The pumping structure includes an integral two-stage vacuum pump. The first-stage pump is a cryogenic pump having a pump chamber and cryoarrays mounted on an expander for cryocondensation of the principal gases present in the vacuum chamber. The second-stage pump operates at room temperatures and includes one or more getter pumps whose principal function is to remove hydrogen molecules that may be present in the vacuum chamber after the first-stage cryopump has removed most of the cryocondensable gases from the vacuum chamber. In one aspect of the invention, the first-stage pump is separated from the second-stage pump by a gate valve to protect the getter pumps during the regeneration flushing of nitrogen through the first-stage cryogenic pump chamber.

Abstract: Cryopump apparatus and method for controlling the operating temperature of a cryoarray in a cryopump. The cryopump has means for thermally isolating one of more of the cryoarrays from the refrigeration source. The means for thermally isolating is a thermal switch formed from at least first and second switch elements made of materials having dissimilar coefficients of thermal expansion. The thermal switch is also used in isolating one of the pump's cryoarrays during a partial regeneration process. The thermal switch of the preferred embodiment may also be used to prevent one of the pump's cryoarrays from falling below a predetermined operating temperature.

Abstract: Apparatus for vacuum pumping an enclosed chamber includes a cryopump in gas communication with the chamber for removing gases by cryocondensation and cryotrapping and an auxiliary pumping device for removing gases that are difficult to remove by cryocondensation or cryotrapping. The cryopump does not contain a sorbent material for cryosorption. As a result, the potential for contamination by a sorbent material is eliminated. The auxiliary pumping device can comprise an ion pump or a turbomolecular vacuum pump. When an ion pump is used, the ion pump is inactivated during periods of high gas loading in the chamber. The vacuum pumping apparatus is particularly useful for vacuum pumping of a plasma vapor deposition chamber.