Abstract: A device for growing single crystals, in particular of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the single crystals, wherein the device includes at least one seed crystal layer, wherein the seed crystal layer is assembled from multiple seed crystal plates in a tessellated manner.

Abstract: A device for aligning a metal blank for a temperature control system which has at least one temperature control unit for heating or cooling the metal blank includes at least two support rollers on which the metal blank can be placed and conveyed through the temperature control system by rotation of the support rollers in the throughput direction and within a conveying plane. The support rollers are arranged spaced apart in the throughput direction. The device further includes a first centering unit having at least one centering finger which is movably arranged within the conveying plane such that the centering finger is movable transversely to the throughput direction in order to align the metal blank in a predetermined orientation.

Abstract: A vertical furnace for the continuous heat treatment of a metal strip, in particular for an electrical steel strip, as seen in the conveying direction of the metal strip, includes an inlet zone for the metal strip; a heating/holding zone with an annealing chamber for heating and holding the metal strip at a certain temperature; a first cooling zone for cooling the metal strip; and a deflection device, arranged downstream of the first cooling zone with at least one roller arrangement, for deflecting the metal strip in the direction of an outlet zone for the metal strip. At least one second cooling zone is arranged downstream of the deflection device with respect to the conveying direction.

Abstract: A method for growing crystals using PVT or PVD or CVD, includes: providing: a chamber for crystal growth, a crucible in the chamber including at least one deposition section with a seed crystal and a base material for crystal growth, at least one temperature monitoring device, a gas supply device and at least one fluid inlet and outlet, and a pressure monitoring device; evacuating the chamber using a pumping device; flushing the chamber with an inert gas; heating the chamber to a growth temperature of 2000 to 2400° C. using at least one heating device; decreasing pressure to 0.1 to 100 mbar; supplying a dopant, (during a growth process); regulating process parameters in the growth process; increasing chamber pressure at the growth process end; cooling down the chamber; wherein the heating of the chamber from an ambient temperature to the growth temperature occurs within 10 to 10000 minutes.

Abstract: A method for growing single crystals, in particular silicon carbide single crystals, uses a device including a crucible, the crucible defining an outer surface and delimiting a receptacle having an axial extent between a bottom portion and an opening portion. The receptacle is designed for crystal growth and at least one seed crystal layer is located in the opening portion, the seed crystal layer being weighed down by a weighting mass at a side remote from the receptacle and being fixed, in particular exclusively, by the weight force of the weighting mass in its position against at least one holding portion located in the opening portion.

Abstract: The present invention relates to a device for carrying component parts to be temperature-controlled, in particular coiled metal strips or metal wires, in a temperature-control device. The carrier device has a base body and a carrier element, to which a component part is attachable, wherein the carrier element is detachably attached to the base body. The base body has a transport coupling, which is configured such that the transport coupling is detachably fixable to a handling system for handling the device.

Abstract: A device for growing crystals, includes a crucible and an enveloping unit surrounding it for the thermal insulation of the crucible The enveloping unit is held on the crucible in its position relative thereto by a holding unit The holding unit includes at least one holding element designed to be oblong and preferably non-rigid, having a first and second end section The holding element surrounds the enveloping unit circumferentially on the side facing away from the crucible and contacts it.

Abstract: A device for growing single crystals, in particular single crystals of silicon carbide, includes a crucible, which crucible defines an outer lateral surface and moreover delimits an accommodation space with an axial extension between a bottom section and an opening section, wherein the accommodation space is designed for growing the crystals, wherein the device hast at least one seed crystal layer wherein the crucible is arranged in a chamber, in particular made of a glass material, for example quartz glass, wherein an induction heater is arranged around the chamber. The crucible is designed to have multiple parts and includes a crucible bottom section, at least one crucible wall part, and a crucible cover part, which are releasably connected to one another.

Abstract: A device for producing single crystals of silicon carbide has a furnace and a chamber with a crucible and a seed crystal, the chamber being accommodated in the furnace, wherein a base material containing silicon carbide is arranged in the crucible, wherein the base material contains a mixture of silicon carbide powder and silicon carbide lumps.

Abstract: The invention relates to a device for temperature-controlling a component part. The device has a temperature-control zone, along which the component part is movable along a conveying direction. The temperature-control zone is configured to temperature-control at least one temperature-control section of the component part. Furthermore, the device has a temperature-control zone controller, which is configured to cover a covering region of the temperature-control zone such that in the covering region a temperature-control effect from the temperature-control zone on the temperature-control section of the component part is reducible. Herein, the temperature-control zone controller is configured so as to adjust the size of the covering region.

Abstract: A strip flotation furnace for controlling the temperature of a metal strip has a flotation nozzle bar extending through the furnace transversely to a strip running direction of the strip. The flotation nozzle bar has two opposing first flotation nozzle rows spaced apart by a central region of the flotation nozzle bar. The rows are set up so that corresponding flotation nozzle jets, with a directional component toward the central region, can be generated to provide pressure cushioning for metal strip guiding. A temperature-control nozzle bar extends transversely to and is spaced apart from the flotation nozzle bar along the strip running direction. The temperature-control nozzle bar has two additional opposing temperature-control nozzle rows spaced apart by an additional temperature-control nozzle bar central region. These rows are set up so that corresponding temperature-control nozzle jets, with a directional component opposite to the additional central region, can be generated.

Abstract: A crucible device includes a heating chamber, at least a first crucible in which a first crystal is growable, and at least a second crucible in which a second crystal is growable. The first crucible and the second crucible are arranged within the heating chamber spaced apart from each other along a horizontal and vertical and any orientational direction. The crucible device further comprises a heating system arranged within the heating chamber, wherein the heating system is configured for adjusting a temperature along the horizontal and vertical and any orientational directions.

Abstract: The present invention relates to a temperature-control unit for a furnace device for heat treating a plate, in particular a metal plate. The temperature-control unit has a temperature-control body, which is arrangeable in a furnace chamber of the furnace device. The temperature-control body has a plurality of receiving bores. Furthermore, the temperature-control unit has a plurality of temperature-control pins, wherein the temperature-control pins are mounted in the receiving bores movably relative to the temperature-control body. The temperature-control pins are controllable in such a way that a temperature-control group of the temperature-control pins is extendable from the temperature-control body in the direction towards the plate, so that a thermal contact between the temperature-control group of the temperature-control pins and a predetermined temperature-control zone of the plate is generatable.

Abstract: An arrangement for heat treating component parts. The arrangement has a first temperature control station for heat treating component parts and a second temperature control station for heat treating component parts, wherein the first temperature control station and the second temperature control station each have a temperature control device, on each of which a functional device is placeable. The functional device is a charging device for carrying component parts to be temperature-controlled or a device of the temperature control device. The arrangement further has a charging station, on which the functional device is placeable, and a handling system for handling the functional device, wherein the handling system is configured to convey the functional device between the charging station, the first temperature control station and the second temperature control station.

Abstract: A crucible device for growing crystals includes a container being arrangeable in a heating chamber of a heating apparatus, and a seed fixture element. The container includes a base section and the seed fixture element includes a seed surface which is configured for attaching a seed crystal. The seed fixture element is moveable coupled to the base section such that the distance between the seed surface and the base section is adjustable.

Abstract: The present invention relates to a furnace device for heating a plate, in particular a metal plate, by convection. The furnace device has a housing, in which a temperature control region for temperature-controlling a component part and an adjustment region are formed, wherein the adjustment region has a temperature control device for adjusting a temperature of a temperature control fluid. Further, the furnace device has a positioning device for positioning the plate in the temperature control region in a predetermined orientation, and a ventilator, which is arranged in the housing and which is adapted to circulate the temperature control fluid in the housing between the temperature control region and the adjustment region such that the temperature control fluid is flowable in a flow direction along a surface of the plate.

Abstract: The present invention relates to a continuous furnace system for heat treating a metal component, in particular an aluminium strip. The continuous furnace system has a first heating unit, in which the metal component is heatable for solution annealing up to a first temperature in the range of from 350° C. to 700° C., a cooling unit, in which the metal component is coolable from 300° C. to 750° C. down to 70° C. to 250° C., and a second heating unit, in which the metal component is heatable up to from 150° C. to 290° C. The first heating unit, the cooling unit, and the second heating unit both have a common support structure, on which the first heating unit, the cooling unit, and the second heating unit are fixed together.

Abstract: A strip flotation furnace for controlling the temperature of a metal strip has a flotation nozzle bar extending through the furnace transversely to a strip running direction of the strip. The flotation nozzle bar has two opposing first flotation nozzle rows spaced apart by a central region of the flotation nozzle bar. The rows are set up so that corresponding flotation nozzle jets, with a directional component toward the central region, can be generated to provide pressure cushioning for metal strip guiding. A temperature-control nozzle bar extends transversely to and is spaced apart from the flotation nozzle bar along the strip running direction. The temperature-control nozzle bar has two additional opposing temperature-control nozzle rows spaced apart by an additional temperature-control nozzle bar central region. These rows are set up so that corresponding temperature-control nozzle jets, with a directional component opposite to the additional central region, can be generated.

Abstract: A nozzle system for a band floating system for floatingly guiding a band-shaped material having a nozzle body having a front edge area and a rear edge area opposite to the front edge area, a front gas nozzle arrangement arranged at the front edge area, a rear gas nozzle arrangement arranged at the rear edge area, and a nozzle arrangement arranged, in the conveying direction, in front of the front gas nozzle arrangement and/or behind the rear gas nozzle arrangement such that a liquid fluid is flowable in a fluid jet into a nozzle floating field in the direction towards a band running plane for temperature-controlling the band-shaped material.

Abstract: The present invention relates to an oven device for heat-treating a blank. The oven device has an oven housing having an oven chamber, in which the blank can be heat-treated with a defined temperature, and a tempering body, which is arranged in the oven chamber. Furthermore, the oven device has a tempering body and a tempering device. The tempering device is arranged within the oven chamber movably between a first position and a second position, such that the tempering device is, at least in the first position, in thermal contact with the tempering body and can, in the second position, be brought in thermal contact with the blank.