Abstract: The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: —providing a crystalline silicon substrate having a front side and a back side; —forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; —forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.
Type:
Grant
Filed:
September 20, 2007
Date of Patent:
April 29, 2014
Assignee:
ECN Energieonderzoek Centrum Nederland
Inventors:
Yuji Komatsu, Lambert Johan Geerligs, Valentin Dan Mihailetchi
Abstract: The present invention provides a method of manufacturing a crystalline silicon solar cell, comprising: —providing a crystalline silicon substrate having a front side and a back side; —forming a thin silicon oxide film on at least one of the front and the back side by soaking the crystalline silicon substrate in a chemical solution; —forming a dielectric coating film on the thin silicon oxide film on at least one of the front and the back side. The thin silicon oxide film may be formed with a thickness of 0.5-10 nm. By forming a oxide layer using a chemical solution, it is possible to form a thin oxide film for surface passivation wherein the relatively low temperature avoids deterioration of the semiconductor layers.
Type:
Application
Filed:
September 20, 2007
Publication date:
June 24, 2010
Applicant:
ECN ENERGIEONDERZOEK CENTRUM NEDERLAND
Inventors:
Yuji Komatsu, Lambert Johan Geerligs, Valentin Dan Mihailetchi