Abstract: Some embodiments are directed to a method of determining a sintering thermal impedance of a sintering layer by: providing a substrate having a predetermined substrate thermal impedance and disposing the sintering layer on the substrate forming with the sintering layer a stack. Placing at least one semiconductor die, that includes a semiconductor element with at least two element electrodes on the sintering layer. Injecting an electrical current through the at least two element electrodes for measuring a temperature sensitive parameter of the semiconductor element. Heating the stack with a predetermined heat power and determining, while sintering, a semiconductor element temperature from the measured temperature sensitive parameter.