Patents Assigned to EDGELESS SEMICONDUCTOR CO., LTD. OF ZHUHAI
  • Publication number: 20240014301
    Abstract: Disclosed are a cell structure of a semiconductor device, a preparation method thereof and a semiconductor device. The cell structure includes: a substrate of a first conductive type; at least one first trench gate, at least one second trench gate, at least one third trench gate, and at least one fourth trench gate that are sequentially disposed side by side in an upper surface of the substrate; a source region of the first conductive type located in an upper surface of the well region and disposed on two sides of each trench gate; and an emitter metal layer located above the substrate and electrically connected to the source region, where the first trench gate, the second trench gate, and the third trench gate are isolated from the emitter metal layer by a first interlayer dielectric layer, and the fourth trench gate is electrically connected to the emitter metal layer.
    Type: Application
    Filed: September 21, 2023
    Publication date: January 11, 2024
    Applicants: GREE ELECTRIC APPLIANCES, INC. OF ZHUHAI, EDGELESS SEMICONDUCTOR CO., LTD. OF ZHUHAI
    Inventors: Yiren LIN, Bo SHI, Ting XIAO