Patents Assigned to EGTM Co., Ltd.
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Patent number: 11958874Abstract: According to the embodiment of the present disclosure, an organo tin compound is represented by the following Chemical Formula 1: In Chemical Formula 1, L1 and L2 are each independently selected from an alkoxy group having 1 to 10 carbon atoms and an alkylamino group having 1 to 10 carbon atoms, R1 is a substituted or unsubstituted aryl group having 6 to 8 carbon atoms, and R2 is selected from a substituted or unsubstituted linear alkyl group having 1 to 4 carbon atoms, a branched alkyl group having 3 to 4 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an allyl group having 2 to 4 carbon atoms.Type: GrantFiled: April 11, 2022Date of Patent: April 16, 2024Assignees: EGTM Co., Ltd., SK hynix Inc.Inventors: Jang Keun Sim, Sung Jun Ji, Tae Young Lee, Shin Beom Kim, Sun Young Baik, Tae Hwan Lim, Dong Kyun Lee, Sang Hyun Lee, Su Pill Chun
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Patent number: 11926897Abstract: According to an embodiment of the present disclosure, a niobium precursor compound is represented by Chemical Formula 1 or Chemical Formula 2 below: Therefore, the niobium precursor compound according to an embodiment of the present disclosure has excellent thermal stability, exists in a liquid state at room temperature, and has high volatility, thereby having an advantage which is advantageous for application to a thin film forming process. Further, the niobium thin film formed using the niobium precursor compound according to an embodiment of the present disclosure has a small residual content and has uniform physical properties.Type: GrantFiled: May 25, 2022Date of Patent: March 12, 2024Assignee: EGTM Co., Ltd.Inventors: Tae Young Lee, Sung Jun Ji, Shin Beom Kim, Sun Young Baik
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Publication number: 20240068091Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying a nuclear growth retardant to the inside of the chamber in which the substrate is placed, so that the nuclear growth retardant is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.Type: ApplicationFiled: January 5, 2022Publication date: February 29, 2024Applicant: EGTM Co., Ltd.Inventors: Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Ji Yeon HAN, Ju Hwan JEONG, Hyeon Sik CHO
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Publication number: 20230366080Abstract: Disclosed is a method of forming an area-selective thin film, the method comprising supplying the selectivity material to the inside of the chamber in which the substrate is placed, so that the selectivity material is adsorbed to a non-growth region of the substrate; purging the interior of the chamber; supplying a precursor to the inside of the chamber, so that the precursor is adsorbed to a growth region of the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber, so that the reaction material reacts with the adsorbed precursor to form the thin film.Type: ApplicationFiled: July 8, 2021Publication date: November 16, 2023Applicant: EGTM Co., Ltd.Inventors: Jae Min KIM, Ha Na KIM, Woong Jin CHOI
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Publication number: 20230307226Abstract: Disclosed is a method of depositing thin film, the method comprising: supplying an adduct precursor to the inside of a chamber in which a substrate including at least one gap feature is placed so that the adduct precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adduct precursor to form the thin film and fill the gap feature, wherein the adduct precursor is formed by mixing 1 to 5 moles of a compound and 1 to 5 moles of a metal compound.Type: ApplicationFiled: May 10, 2023Publication date: September 28, 2023Applicant: EGTM Co., Ltd.Inventors: Ha Na KIM, Ju Hwan ` JEONG, Kyu Ho CHO, Jae Min KIM, Duck Hyeon SEO, Ji Yeon HAN, Hyun Ju JUNG
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Publication number: 20230287014Abstract: Disclosed is a method for manufacturing an aluminum precursor formed by mixing 1 to 3 moles of a compound represented by the following Chemical Formula 1 or following Chemical Formula 2 and 1 to 3 moles of a compound represented by the following Chemical Formula 3. wherein X is O or S, and R1 or R2 is each independently selected from an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein X is O or S, n is 1 to 5, and R1 to R4 are each independently selected from a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 12 carbon atoms. wherein R1, R2 and R3 are different from each other, and each independently selected from a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, a dialkylamine having 1 to 6 carbon atoms, a cycloamine group having 1 to 6 carbon atoms, or a halogen atom.Type: ApplicationFiled: May 10, 2023Publication date: September 14, 2023Applicant: EGTM Co., Ltd.Inventors: Kyu Ho CHO, Ha Na KIM, Jae Min KIM, Ji Yeon HAN, Duck Hyeon SEO, Ju Hwan JEONG, Hyun Ju JUNG, Hyeon Sik CHO, Myeong Il KIM
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Patent number: 11634441Abstract: A group 5 metal compound according to an embodiment of the present disclosure is represented by any one of the following <Chemical Formula 1> and <Chemical Formula 2>: In <Chemical Formula 1> and <Chemical Formula 2>, M is any one selected from group 5 metal elements, n is any one selected from an integer of 1 to 5, R1 is any one selected from a linear alkyl group having 3 to 6 carbon atoms and a branched alkyl group having 3 to 6 carbon atoms, and R2 and R3 are each independently any one selected from hydrogen, a linear alkyl group having 1 to 4 carbon atoms, and a branched alkyl group having 1 to 4 carbon atoms.Type: GrantFiled: June 9, 2021Date of Patent: April 25, 2023Assignee: EGTM Co., Ltd.Inventors: Tae Young Lee, Sung Jun Ji, Sun Young Baik
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Patent number: 11591691Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.Type: GrantFiled: July 24, 2020Date of Patent: February 28, 2023Assignees: EGTM CO., LTD., SK HYNIX INC.Inventors: Geun Su Lee, Jae Min Kim, Ha Na Kim, Woong Jin Choi, Eun Ae Jung, Dong Hyun Lee, Myung Soo Lee, Ji Won Moon, Dong Hak Jang, Hyun Sik Noh
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Publication number: 20230057512Abstract: According to one embodiment of the present invention, a method of forming a thin film using a surface protection material, the method comprising: supplying a metal precursor to the inside of a chamber in which a substrate is placed so that the metal precursor is adsorbed to the substrate; purging the interior of the chamber; and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film, wherein before forming the thin film, the method further comprises: supplying the surface protection material to the inside of the chamber so that the surface protection material is adsorbed to the substrate; and purging the interior of the chamber.Type: ApplicationFiled: December 30, 2020Publication date: February 23, 2023Applicant: EGTM Co., Ltd.Inventors: Geun Su LEE, Jae Min KIM, Woong Jin CHOI
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Publication number: 20220403521Abstract: According to one embodiment of the present invention, a method for forming a thin film using a surface protection material comprises: a surface protection layer forming step of forming a surface protection layer on the surface of a substrate by supplying a surface protection material to the inside of a chamber in which the substrate is placed; a step of performing a primary purging of the inside of the chamber; a metal precursor supply step of supplying a metal precursor to the inside of the chamber; a step of performing a secondary purging of the inside of the chamber; and a thin film forming step of supplying a reactive material to the inside of the chamber so as to react with the metal precursor and form a thin film.Type: ApplicationFiled: November 16, 2020Publication date: December 22, 2022Applicant: EGTM CO., LTD.Inventors: Geun Su LEE, Jae Min KIM, Ha Na KIM, Woong Jin CHOI
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Publication number: 20220333243Abstract: Disclosed is a method of a method of depositing metal nitride thin films, the method comprising: a deposition step of supplying a metal precursor, so that the metal precursor is deposited selectively on a surface of the substrate; a halogen treatment step of supplying a halogen gas to the substrate to form a metal halogen compound on a surface of the substrate; and a nitridation step of supplying a nitrogen source to the substrate to react with the metal halogen compound to form a metal nitride.Type: ApplicationFiled: July 24, 2020Publication date: October 20, 2022Applicant: EGTM CO., LTD.Inventors: Geun Su LEE, Gil Jae PARK, Jong Tae HONG, Cheol Hee SHIN
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Publication number: 20220194967Abstract: The present specification provides an organic group 4 metal precursor compound and a method for forming a thin film using the same.Type: ApplicationFiled: November 22, 2021Publication date: June 23, 2022Applicant: EGTM Co., Ltd.Inventors: Sung Jun Ji, Sun Young Baik, Tae Young Lee
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Publication number: 20220112600Abstract: Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed; purging the interior of the chamber; supplying a doping precursor to the inside of the chamber; purging the interior of the chamber; supplying a first reactant to the inside of the chamber so that the first reactant reacts with the adsorbed doping precursor to form a doping thin film; supplying a dielectric film precursor to the inside of the chamber; purging the interior of the chamber; and supplying a second reactant to the inside of the chamber so that the second reactant reacts with the adsorbed dielectric film precursor to form a dielectric film.Type: ApplicationFiled: October 7, 2021Publication date: April 14, 2022Applicant: EGTM Co., Ltd.Inventors: Jae Min KIM, Ha Na KIM, Woong Jin CHOI, Ji Yeon HAN, Ha Joon KIM