Patents Assigned to EGYPT NANOTECHNOLOGY CENTER (EGNC)
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Patent number: 9331330Abstract: An electrode includes a conductive substrate and a plurality of conductive structures providing a compressible matrix of material. An active material is formed in contact with the plurality of conductive structures. The active material includes a volumetrically expanding material which expands during ion diffusion such that the plurality of conductive structures provides support for the active material and compensates for volumetric expansion of the active material to prevent damage to the active material.Type: GrantFiled: November 22, 2011Date of Patent: May 3, 2016Assignees: International Business Machines Corporation, Egypt Nanotechnology Center (EGNC)Inventors: Mostafa M. El-Ashry, Osama Tobail, George S. Tulevski
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Patent number: 9102118Abstract: An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.Type: GrantFiled: December 5, 2011Date of Patent: August 11, 2015Assignees: International Business Machines Corporation, Egypt Nanotechnology Center (EGNC)Inventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna, Katherine Saenger
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Patent number: 9102540Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.Type: GrantFiled: December 2, 2011Date of Patent: August 11, 2015Assignees: International Business Machines Corporation, Egypt Nanotechnology Center (EGNC)Inventors: Ali Afzali-Ardakani, Shu-jen Han, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, Razvan Nistor, Hsinyu Tsai
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Publication number: 20130143769Abstract: A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule.Type: ApplicationFiled: December 2, 2011Publication date: June 6, 2013Applicants: EGYPT NANOTECHNOLOGY CENTER (EGNC), INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Shu-jen Han, Amal Kasry, Ahmed Maarouf, Glenn J. Martyna, Razvan Nistor, Hsinyu Tsai
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Publication number: 20130143000Abstract: An apparatus and method for forming a patterned graphene layer on a substrate. One such method includes forming at least one patterned structure of a carbide-forming metal or metal-containing alloy on a substrate, applying a layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy on the substrate, heating the layer of graphene on top of the at least one patterned structure of a carbide-forming metal or metal-containing alloy in an environment to remove graphene regions proximate to the at least one patterned structure of a carbide-forming metal or metal-containing alloy, and removing the at least one patterned structure of a carbide-forming metal or metal-containing alloy to produce a patterned graphene layer on the substrate, wherein the patterned graphene layer on the substrate provides carrier mobility for electronic devices.Type: ApplicationFiled: December 5, 2011Publication date: June 6, 2013Applicants: EGYPT NANOTECHNOLOGY CENTER (EGNC), INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna, Katherine Saenger