Patents Assigned to EIICHI KONDOH
  • Publication number: 20060121307
    Abstract: In a film deposition method which forms a Cu film on a Cu diffusion preventing film formed on a substrate, a contact film which is provided for adhering the Cu film to the Cu diffusion preventing film is formed on the Cu diffusion preventing film. A processing medium in which a precursor is dissolved in a medium of a supercritical state is supplied to the substrate so that the Cu film is formed on the contact film.
    Type: Application
    Filed: October 17, 2005
    Publication date: June 8, 2006
    Applicants: TOKYO ELECTRON LIMITED, EIICHI KONDOH
    Inventors: Koumei Matsuzawa, Hiroshi Sato, Takayuki Komiya, Eiichi Kondoh, Kenji Matsumoto
  • Publication number: 20060099348
    Abstract: A deposition method for depositing on a substrate includes the step of: using a process medium made by adding a precursor to a medium in a supercritical state. The precursor is added to the medium in the supercritical state where the precursor is dissolved in an organic solvent.
    Type: Application
    Filed: October 14, 2005
    Publication date: May 11, 2006
    Applicants: TOKYO ELECTRON LIMITED, EIICHI KONDOH
    Inventors: Masaki Narushima, Koumei Matsuzawa, Takayuki Komiya, Eiichi Kondoh
  • Publication number: 20060084266
    Abstract: A film formation method of forming a film on a fine-pattern by supplying a processing medium that is in the supercritical state in which a precursor is dissolved on a target substrate is disclosed. The film formation method includes a first process of supplying the processing medium on the target substrate, the temperature of which is set at a first temperature that is lower than a film formation minimum temperature that is the lowest temperature at which film formation takes place, and a second process of forming the film on the target substrate by raising the temperature of the target substrate from the first temperature to a second temperature that is higher than the film formation minimum temperature.
    Type: Application
    Filed: October 19, 2005
    Publication date: April 20, 2006
    Applicants: TOKYO ELECTRON LIMITED, EIICHI KONDOH
    Inventors: Masaki Narushima, Koumei Matsuzawa, Hiroshi Sato, Takayuki Komiya, Eiichi Kondoh
  • Publication number: 20050158477
    Abstract: A deposition apparatus for supplying a process medium including a medium in a supercritical state and a precursor to a processed substrate so that the processed substrate is deposited on, includes a process vessel, a support stand which is provided in the process vessel, is configured to support the processed substrate, and include a heating part, a medium supply part which is connected to the process vessel via a medium supply path and supplies the process medium to the process vessel, and a medium reflux path configured to reflux the process medium supplied to the process vessel to the medium supply part. The medium supply part includes a first temperature control part configured to control a temperature of the process medium.
    Type: Application
    Filed: December 22, 2004
    Publication date: July 21, 2005
    Applicants: TOKYO ELECTRON LIMITED, EIICHI KONDOH
    Inventors: Vincent Vezin, Kenichi Kubo, Takayuki Komiya, Eiichi Kondoh