Patents Assigned to Eiji TANI
  • Publication number: 20060269683
    Abstract: The present invention provides a silicon carbide-based, porous, lightweight, heat-resistant material which can retain the shape of a porous structural body formed of, for example, corrugated cardboard and provides a manufacturing method therefor. The silicon carbide-based, porous, lightweight material is produced by a process including the steps of infiltrating a slurry composed of a resin and powdered silicon into a porous structural body having a framework formed of paper such as corrugated cardboard, wood, a woven cloth, a non-woven cloth, a plastic, or the like; carbonizing the infiltrated porous structural body at 900 to 1,350° C. in an evacuated or an inert atmosphere; and performing reaction-bonding for the obtained structural body at 1,350° C. or more in an evacuated or an inert atmosphere. By the reaction-bonding, silicon carbide having superior molten silicon wettability and open pores caused by the reaction during which the reaction volume decreases are simultaneously formed.
    Type: Application
    Filed: August 1, 2006
    Publication date: November 30, 2006
    Applicant: Eiji TANI
    Inventor: Eiji Tani
  • Publication number: 20030035901
    Abstract: The present invention provides a silicon carbide-based, porous, lightweight, heat-resistant material which can retain the shape of a porous structural body formed of, for example, corrugated cardboard and provides a manufacturing method therefor. The silicon carbide-based, porous, lightweight material is produced by a process including the steps of infiltrating a slurry composed of a resin and powdered silicon into a porous structural body having a framework formed of paper such as corrugated cardboard, wood, a woven cloth, a non-woven cloth, a plastic, or the like; carbonizing the infiltrated porous structural body at 900 to 1,350° C. in an evacuated or an inert atmosphere; and performing reaction-bonding for the obtained structural body at 1,350° C. or more in an evacuated or an inert atmosphere. By the reaction-bonding, silicon carbide having superior molten silicon wettability and open pores caused by the reaction during which the reaction volume decreases are simultaneously formed.
    Type: Application
    Filed: August 17, 2001
    Publication date: February 20, 2003
    Applicant: Eiji TANI
    Inventor: Eiji Tani