Patents Assigned to EipValley Co., Ltd.
  • III-nitride compound semiconductor light emitting device
    Patent number: 7923749
    Abstract: The present invention relates a III-nitride compound semiconductor light emitting device in which a first layer composed of a carbon-containing compound layer, such as an n-type or p-type silicon carbide (SiC), silicon carbon nitride (SiCN) or carbon nitride layer (CN) layer, is formed on the p-type III-nitride semiconductor layer of the existing III-nitride semiconductor light emitting device, and a second layer composed of a III-nitride semiconductor layer with a given thickness is formed on the first layer.
    Type: Grant
    Filed: March 25, 2005
    Date of Patent: April 12, 2011
    Assignee: EipValley Co., Ltd.
    Inventors: Tae Kyung Yoo, Eun Hyun Park