Abstract: A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.

Abstract: The present invention relates to the use of ozone (O3) as a reagent in chemical mechanical planarization either in aqueous solution or as a gas directly impinging on the surface to be planarized. An aqueous solution containing ozone may optionally contain abrasive particles and/or additional CMP reagents co-dissolved with the ozone including carbonate and bicarbonate anions, and organic acids such as formic, oxalic, acetic and glycol. Abrasives that may be added include alumina, silica, spinel, ceria, zirconia. Typical concentrations of ozone aqueous solution are in the range from approximately 1 part-per-million up to saturation. Ammonium salts, particularly ammonium carbonate, facilitate planarization in cooperation with ozone-containing aqueous solution. Low k dielectric materials, organic as well as inorganic, and difficult to oxidize metals can be planarized with ozone reagents pursuant to the present invention.

Abstract: This invention comprises methods for making nanostructured and nanoporous thin film structures of various compositions. These films can be directly patterned. In these methods, precursor films are deposited on a surface and different components of the precursor film are reacted under selected conditions, forming a nanostructured or nanoporous film. Such films can be used in a variety of applications, for example, low k dielectrics, sensors, catalysts, conductors or magnetic films. Nanostructured films can be created: (1) using one precursor component and two reactions, (2) using two or more components based on differential rates of photochemical conversion, (3) using two precursors based on the thermal sensitivity of one precursor and the photochemical sensitivity of the other, and (4) by photochemical reaction of a precursor film and selected removal of a largely unreacted component from the film.

Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.

Abstract: The present invention relates generally to a method and apparatus for converting a precursor material, preferably organometallic, to a film, preferably metal-containing, that is adherent to at least a portion of a substrate. Both method and apparatus include a pre-conversion step or section, and a step or section for substantial conversion of a portion of material from the pre-conversion step or section into the form of a predetermined pattern, wherein this substantial conversion results in a metal-containing patterned layer on the substrate.

Abstract: The present invention provides a composition for chemical-mechanical polishing which comprises an oxidizing agent, an abrasive, and a Fenton's reagent. The oxidizing agent comprises a per compound, such as periodic acid, a peroxide, or a persulfate. The abrasive comprises a metal oxide, such as colloidal silica, alumina, or spinel. The Fenton's reagent comprises a metal selected from a group consisting of metals in Group 1(b) and Group 8, such as iron, copper and silver. The composition is believed to be effective by virtue of the interaction between the oxidizing agent and the Fenton's reagent that is at least partially linked to the surface of the abrasive. The invention further provides a method that employs the composition in the polishing of a feature or layer, such as a metal film, on a substrate surface. The invention additionally provides a substrate produced this method.

Abstract: The invention is directed to a photoresist-free method for depositing films composed of metals, such as copper, or its oxides from metal complexes. More specifically, the method involves applying an amorphous film of a metal complex to a substrate. The metal complexes have the formula MfLgXh, wherein M is selected from the group consisting of Ti, V, Cr, Au, Mn, Fe, Co, Ni, Cu, Zn, Si, Sn, Li, Na, K, Ba, Sr, Mo, Ru, Pd, Pt, Re, Ir, and Os; L is a ligand of the formula (R2NCR′2CR″2O), wherein R, R′ and R″ are independently selected from H, CnHm, and CnHmAxBy, wherein A and B are independently selected from main group elements and f, g, h, n, m, x and y represent integers; and X is an anion independently selected from N3, NCO, NO3, NO2, Cl, Br, I, CN, OH, H and CH3. These films, upon, for example, thermal, photochemical or electron beam irradiation may be converted to the metal or its oxides.

Abstract: Clean room wipe products, methods of preparing them, and methods of using them are described. The clean room wipes are intended for use in cleaning up alkaline contaminants in clean room environments. The wipes contain impregnated acidic solutions, e.g., solutions of organic acids and optionally solvents, which are intended to reduce or eliminate the possibility of spontaneous combustion of the contaminated wipes, that is, when the wipes are used to contain spills of alkaline products such as hydroxylamine-based products and other caustic based formulations.

Abstract: The present invention relates to compositions for the chemical mechanical planarization (“CMP”) of barrier/adhesion layers, particularly Ta/TaN barrier/adhesion layers as occur in the manufacture of integrated circuits. CMP compositions comprise an aqueous solution of oxidizer and colloidal silica abrasive. Oxidizers include hydroxylamine nitrate, nitric acid, benzotriazole, ammonium nitrate, aluminum nitrate, hydrazine and mixtures thereof in aqueous solution.

Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.

Abstract: A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material.

Abstract: The present invention relates chemical mechanical planarization (“CMP”) of copper surfaces and describes copper CMP slurries including an oxidizer, one or more hydroxylamine compounds and at least one abrasive. The hydroxylamine compositions can include hydroxylamine nitrate, hydroxylamine, hydroxylamine sulfate, hydroxyl ammonium salts and mixtures thereof. The oxidizers may further include citric acid as a complexing agent for copper. Sulfuric acid and/or nitric acid provide means for modifying the pH of the oxidizer so that the hydroxylamine chemistries are acidic. Some embodiments include corrosion inhibitors such as benzotriazole, 2,4-pentadione dioxime and/or 1,6-dioxaspiro[4,4]nonane 2,7-dione. Some embodiments also include a free radical inhibitor, advantageously hydrazine. Colloidal silica and milled alumina are used as typical abrasive components.

Abstract: A two carbon atom linkage alkanolamine compound composition comprises the two carbon atom linkage alkanolamine compound, gallic acid or catechol, and optionally, an aqueous hydroxylamine solution. The balance of the composition is made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the two carbon atom linkage alkanolamine compound in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Abstract: The present invention involves fabrication of a hard mask. An embodiment involves the conversion of a precursor into a top-surface imaging layer during a direct patterning step. Another embodiment of the present invention is a method of forming an etched pattern in a substrate. A further embodiment of the present invention is a method of forming an implanted region in a substrate. Preferred precursors are formed from a metal complex comprising at least one ligand selected from the group consisting of acac, carboxylato, alkoxy, azide, carbonyl, nitrato, amine, halide, nitro, and mixtures thereof and at least one metal selected from the group consisting of Li, Al, Si, Ti, V, Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Ba, La, Pr, Sm, Eu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Pb, Th, U, Sb, As, Ce, Mg, and mixtures thereof.

Abstract: A composition for removal of chemical residues from metal or dielectric surfaces or for chemical mechanical polishing of a copper or aluminum surface is an aqueous solution with a pH between about 3.5 and about 7. The composition contains a monofunctional, difunctional or trifunctional organic acid and a buffering amount of a quaternary amine, ammonium hydroxide, hydroxylamine, hydroxylamine salt, hydrazine or hydrazine salt base. A method in accordance with the invention for removal of chemical residues from a metal or dielectric surface comprises contacting the metal or dielectric surface with the above composition for a time sufficient to remove the chemical residues. A method in accordance with the invention for chemical mechanical polishing of a copper or aluminum surface comprises applying the above composition to the copper or aluminum surface, and polishing the surface in the presence of the composition.

Abstract: A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.

Abstract: The present invention relates to chemical compositions and methods of use for cleaning CMP equipment, including the interiors of delivery conduits carrying CMP slurry to the necessary sites. The chemical compositions of the present invention are also useful for post-CMP cleaning of the wafer itself. Three classes of cleaning compositions are described, all of which are aqueous solutions. One class operates in a preferable pH range from about 11 to about 12 and preferably contains one or more non-ionic surfactants, one or more simple amines, a surfactant or sticking agent, such as one or more soluble dialcohol organic compounds, and one or more quaternary amines. A second class of cleaning composition operates in a preferable pH range of approximately 8.5 and contains one or more of citric acid, lactic acid, and oxalic acid. A third class of compositions is acidic, having a preferable pH range from about 1.

Abstract: An ethylenediaminetetraacetic acid or a mono- di- tri- or tetraammonium salt thereof residue cleaning composition removes photoresist and other residue from integrated circuit substrates. The balance of the composition is desirably made up of water, preferably high purity deionized water, or another suitable polar solvent. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, comprises contacting the substrate with the composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of the ethylenediaminetetraacetic acid or a mono- di- tri- or tetraammonium salt thereof in the composition and process provides superior residue removal without attacking titanium or other metallurgy, oxide or nitride layers on the substrate.

Abstract: A method for depositing nanoparticles in a thin film through the dispersion of such nanoparticles in a precursor solution which is deposited on a substrate and converted into a metal or metal oxide film. The resulting metal or metal oxide film will contain embedded nanoparticles. Such films can be used in a variety of applications such as diffusion barriers, electrodes for capacitors, conductors, resistors, inductors, dielectrics, or magnetic materials. The nanoparticle material may be selected by one skilled in the art based on the particular application.

Abstract: A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of ULSI manufacturing in a dual damascene structure.