Abstract: A light emitting element manufacturing method of allowing a semiconductor laminated part which includes a light emitting layer and includes a group-III nitride semiconductor to grow on a substrate surface in which protrusions are formed in a period which is larger than an optical wavelength of light emitted from the light emitting layer and is smaller than a coherent length of the light, includes: forming a buffer layer along the substrate surface having the protrusions; allowing crystal nuclei which have facet surfaces and are separated from each other to grow on the buffer layer such that the crystal nuclei include at least one protrusion; and allowing a planarization layer to grow on the buffer layer in which the crystal nuclei are formed.

Abstract: An LED element capable of further improving the light extraction efficiency and its manufacturing method are provided.

Abstract: In order to achieve appropriate light distribution using light distribution characteristics resulting from diffraction while improving light extraction efficiency using a diffraction effect, an LED element provided with: a substrate in which periodic depressions or projections are formed on a front surface; a semiconductor laminated part that is formed on the front surface of the sapphire substrate, includes a light-emitting layer, and is formed of a group-III nitride semiconductor; and a reflecting part that reflects at least a part of light emitted from the light-emitting layer toward the front surface of the substrate, the LED element obtaining a diffraction effect of light emitted from the light-emitting layer at an interface between the substrate and the semiconductor laminated part, wherein a relation of 1/2×??P?16/9×? is satisfied, where a period of the depressions or the projections is P and a peak wavelength of the light emitted from the light-emitting layer is ?.

Abstract: In order to provide a light-emitting device having improved color rendering properties, a light-emitting device which uses a SiC fluorescent material comprises a first SiC fluorescent portion in which a donor impurity and an acceptor impurity are added and which is formed of a SiC crystal; a second SiC fluorescent portion which is formed of a SiC crystal in which the same donor impurity as the first SiC fluorescent portion and the same acceptor impurity as the first SiC fluorescent portion are added, and in which a concentration of the acceptor impurity is higher than the concentration of the acceptor impurity in the first SiC fluorescent portion and an emission wavelength is longer than that of the first SiC fluorescent portion; and a light-emitting portion that emits excitation light that excites the first SiC fluorescent portion and the second SiC fluorescent portion.

Abstract: Provided are an etching method capable of increasing an etching selectivity between a subject material and a resist, a sapphire substrate processed using the etching method, and a light-emitting device including the sapphire substrate. An etching method using a plasma etching apparatus includes: a resist film forming step of forming a resist film on a subject material; a pattern forming step of forming a predetermined pattern on the resist film; a resist degenerating step of exposing the resist film on which the pattern is formed to plasma under a predetermined degeneration condition to degenerate the resist film and increase an etching selectivity; and a subject material etching step of exposing the subject material to plasma under an etching condition different from the degeneration condition to etch the subject material using the resist film having an increased etching selectivity as a mask.

Abstract: An LED element capable of further improving the light extraction efficiency and its manufacturing method are provided.

Abstract: An LED element capable of further improving the light extraction efficiency and a manufacturing method for the same are provided. In an LED element, a front surface of a sapphire substrate foams a verticalized moth eye surface having a plurality of depression parts or projection parts whose period is greater than twice an optical wavelength of light emitted from a light-emitting layer and smaller than coherent length, and a light whose intensity distribution is adjusted by reflecting on and transmitting through the verticalized moth eye surface to be inclined to a vertical direction with respect to an interface between a semiconductor lamination unit and the sapphire substrate is discharged from a transmission moth eye surface to an outer side of the element with Fresnel reflection being inhibited.

Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

Abstract: [Problem] A problem is to provide a method of manufacturing a glass substrate with a concave-convex film using dry etching capable of giving a fine concave-convex structure precisely by dry etching, a glass substrate with a concave-convex structure, a solar cell, and a method of manufacturing a solar cell. [Means to Solve the Problem] In order to give a concave-convex structure to a glass substrate made of a plurality of oxides placed in different vapor pressures during dry etching, a subject film forming step and a concave-convex structure forming step are provided. The subject film forming step forms a subject film made of a single material on a flat surface of the glass substrate. The concave-convex structure forming step forms a periodic concave-convex structure in a surface of the subject film by dry etching. As a result, a fine concave-convex structure is formed precisely by dry etching.

Abstract: A semiconductor light emitting element includes a semiconductor stack part that includes a light emitting layer, a diffractive face that light emitted from the light emitting layer is incident to, convex portions or concave portions formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, wherein the diffractive face reflects incident light in multimode according to Bragg's condition of diffraction and transmits the incident light in multimode according to the Bragg's condition of diffraction, and a reflective face which reflects multimode light diffracted at the diffractive face and let the multimode light be incident to the diffractive face again. The semiconductor stack part is formed on the diffractive face.

Abstract: [Problem] To provide a group III nitride semiconductor device and a method for manufacturing the same in which dislocation density in a semiconductor layer can be precisely reduced. [Solution] In manufacturing a group III nitride semiconductor device 1, a mask layer 40 is formed on a substrate 20, followed by selectively growing nanocolumns 50 made of a group III nitride semiconductor through a pattern 44 of the mask layer 40 in order to grow a group III nitride semiconductor layer 10 on the mask layer 40.

Abstract: [PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate. [MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.