Patents Assigned to Electric Power Research Institut
  • Patent number: 5030295
    Abstract: The interface of a silicon oxide passivation layer and a silicon substrate in a silicon solar cell is stabilized by covering the silicon oxide passivation layer with a layer of undoped or phosphorus doped polycrystalline silicon. A second layer of silicon oxide is formed by deposition on the surface of the phosphorus doped polycrystalline and enhances the anti-reflection characteristics of the composite structure.
    Type: Grant
    Filed: February 12, 1990
    Date of Patent: July 9, 1991
    Assignee: Electric Power Research Institut
    Inventors: Richard M. Swanson, Jon-Yiew Gan, Peter E. Gruenbaum