Abstract: The interface of a silicon oxide passivation layer and a silicon substrate in a silicon solar cell is stabilized by covering the silicon oxide passivation layer with a layer of undoped or phosphorus doped polycrystalline silicon. A second layer of silicon oxide is formed by deposition on the surface of the phosphorus doped polycrystalline and enhances the anti-reflection characteristics of the composite structure.
Type:
Grant
Filed:
February 12, 1990
Date of Patent:
July 9, 1991
Assignee:
Electric Power Research Institut
Inventors:
Richard M. Swanson, Jon-Yiew Gan, Peter E. Gruenbaum