Abstract: Disclosed herein are an apparatus and a method for measuring activity of a plating solution. The apparatus for measuring activity of a plating solution may include: a plating bath containing the plating solution for plating a plating object; a first electrode which is impregnated in the plating solution and has a plated body to measure current that flows in the plating solution and on the surface of the body in accordance with applied signal voltage; a second electrode which is impregnated in the plating solution to induce current from the first electrode or discharge current to the first electrode; a third electrode which controls the signal voltage applied to the first electrode to be constantly maintained; an impedance measurement unit which calculates an impedance value from the current measured in the first electrode; and a processing unit which displays a change of the calculated impedance value depending on a time.

Abstract: An image interpolation method interpolating image information of a point in a space constructed by a plurality of planes. According to the method, a reliable interpolated value can be rapidly obtained by searching for the nearest plane to the point, obtaining information about a plane facing the nearest plane using image information of one or more vertices of the plane facing the nearest plane, and interpolating the image information of the point using the image information of the one or more vertices of the nearest plane and the obtained information about the plane facing the nearest plane.

Abstract: The present invention provides a frequency tuning/DC offset canceling circuit for continuous-time analog filter with time division, the frequency tuning/DC offset canceling circuit including: a frequency tuning/DC offset canceling unit for performing frequency tuning by comparing an output voltage with a reference voltage when a frequency tuning control signal is inputted, and canceling a DC offset after terminating the frequency tuning when a DC offset canceling control signal is inputted; and a control signal generator for generating the frequency tuning control signal and the DC offset canceling control signal based on a reference clock in time division.

Abstract: A method of manufacturing a semiconductor package may include: forming a first board; forming second boards, in each of which at least one cavity is formed; attaching the second boards to both sides of the first board, such that the second boards are electrically connected with the first board; and connecting at least one component with the first board by a flip chip method by embedding the component in the cavity. The method can prevent damage to the semiconductor chips and lower manufacturing costs, while the connection material may also mitigate stresses, to prevent cracking in the boards and semiconductor chips, while preventing defects such as bending and warpage. Defects caused by temperature changes may also be avoided. Furthermore, it is not necessary to use an underfill in the portions where the semiconductor chips are connected with the printed circuit board, which allows for easier reworking and lower costs.

Abstract: An active balun with a stacked structure includes: a first amplification unit including a first transistor having a first terminal connected with a first input terminal, a second terminal connected with a power voltage terminal, and a third terminal connected with an output terminal; a second amplification unit including a second transistor having a first terminal connected with a second input terminal, a second terminal connected with the output terminal, and a third terminal connected with a ground; and a capacitance matching unit connected between the first terminal and the third terminal of the first transistor and having a pre-set matching capacitance.

Abstract: A buffer amplifier has high input impedance and is less affected by temperature by supplying independent bias power to each of amplification units. The buffer amplifier includes a bias supply unit supplying bias power having a preset voltage level, an amplification unit receiving preset driving power and the bias power from the bias supply unit to amplify an input signal, and a compensation unit compensating for current unbalance of the driving power supplied to the amplification unit.

Abstract: There are provided an ink composition, a metal thin film prepared using the same, and a method of preparing the same. The ink composition according to the present invention includes: gold-containing complex compound represented by the following Formula 1 (L and L? are at least one selected from a group consisting of diolefin and derivatives thereof, and X is at least one selected from a group consisting of chlorine (Cl), bromine (Br), and iodine (I), where m=an integer of 1˜10, n=an integer of 1˜10, o=an integer of 0˜10, and p=an integer of 0˜10); and a solvent dispersing the gold-containing complex compound. AumLnL?oXp??Formula 1 The present invention can provide ink composition that can be sintered at low temperature by being optionally printed, a metal thin film prepared using the same, and a method of preparing the same.

Abstract: There are provided a method for producing metal nanoparticles including preparing a first solution including a metal precursor, an amine, and a non-aqueous solvent; producing metal nanoparticles capped with amine by heating, agitating, and reducing the first solution; preparing a second solution by washing a non-reactive amine among the produced metal nanoparticles and dispersing the metal nanoparticles in the non-aqueous solvent; and partially capping an acid on the metal nanoparticles dispersed by adding the acid to the second solution and heating and agitating it, an ink composition using the same, and a method for producing the same. The exemplary embodiments of the present invention can provide a method for producing metal nanoparticles having surface stability, excellent adhesion, an effect of reducing cracks by modifying the substituents of metal nanoparticles, an ink composition using the same, and a method for producing the same.

Abstract: There are provided a method for producing metal nanoparticles, including: preparing a first solution including a halogen ion-containing metal precursor, an amine, and a non-aqueous solvent; producing a second solution including metal nanoparticles in which the amine is capped by heating, agitating, and reducing the first solution; and washing and drying the second solution with a base-containing solvent in order to remove non-reacted amine and halogen ions from the produced metal nanoparticles in which the amine is capped, an ink composition using the same, and a method for producing the same. According to an exemplary embodiment of the present invention, the method for producing metal nanoparticles meeting the residual halogen ion concentration regulations, the ink composition using the same, and the method for producing the same can be provided.

Abstract: There is provided an inkjet head assembly that can readily store ink by separating a passage for transferring ink from a passage for transferring ink between a first storage unit and a second storage unit inside an ink tank. An inkjet head assembly according to an aspect of the invention may include: an ink tank including a first storage unit receiving ink therein and a second storage unit receiving the ink from the first storage unit to maintain a full ink level within the ink, and having an ink transfer hole, through which the ink is supplied from the first storage unit to the second storage ink, and an air transfer hole, through which air from the second storage unit is transmitted to the first storage unit, between the first and second storage units; and an inkjet head connected to the second storage unit via an ink supply passage, the inkjet head receiving the ink from the second storage unit to eject the ink.

Abstract: Disclosed herein is a fibrous separation membrane for secondary batteries, comprising: a support layer containing cellulose fiber; and a first heat-resistant resin layer applied on one side of the support layer.

Abstract: There is provided a semiconductor device and a method of manufacturing the same.

Abstract: Disclosed herein is an FPCB connection structure of a touch screen panel. The FPCB connection structure includes a touch screen panel and an FPCB. The touch screen panel has a connection part in which a plurality of connection holes is formed. The connection holes extend to ends of a plurality of electrode wires. The FPCB includes a substrate having a plurality of lead wires formed thereon, and a plurality of metal pins inserted into the plurality of connection holes to be connected to the ends of the electrode wires via conductive paste. A first through hole passes through the substrate and each of the lead wires, and a second through hole extends from the first through hole and is formed in each of the metal pins in a longitudinal direction thereof.

Abstract: There is provided a method of manufacturing an inkjet print head. The method includes providing a head portion having a dummy portion disposed on a surface of a pressure area pressurizing an ink chamber, a nozzle connected to the ink chamber for ink ejection and the ink chamber for ink supply to the nozzle, and removing the dummy portion. The method allows for the improvement of ink ejection and nozzle density. Also, the method allows for the forming of a thin-type head portion using the dummy portion.

Abstract: There are provided a semiconductor device and a method for manufacturing the same.

Abstract: A liquid crystalline thermoset oligomer or polymer including a structural unit of Chemical Formulae 1 and 2; and a functional group of Chemical Formula A,

Abstract: There is provided a lamp driver including: a power supplying part switching an input power, supplying a driving power to at least one lamp, and controlling brightness of the at least one lamp according to a dimming signal; a signal supplying part supplying a first comparison result signal obtained by comparing a current sensing signal sensing a current flowing through the at least one lamp with a reference signal having a current level set beforehand when the dimming signal is a logic high signal, and supplying a second comparison result signal having a voltage level set beforehand when the dimming signal is a logic low signal; and a controlling part controlling the switching of the power supplying part according to a signal being supplied by the signal supplying part.

Abstract: Provided is an inkjet head assembly capable of reducing the generation of air bubbles during ink injection by using a guide formed inside an ink tank. The inkjet head assembly includes an ink tank including an ink inlet through which ink is injected from the outside, and storing ink injected through the ink inlet, an inkjet head connected with the ink tank through an ink supply channel, receiving ink from the ink tank and discharging the received ink, and a guide disposed inside the ink tank and guiding ink, injected through the ink inlet, to an inner surface of the ink tank.

Abstract: Disclosed herein is a camera module. The camera module includes: a lens barrel with a built-in lens collecting external images; a housing that has a receiving space in which the lens barrel is received; a driving part that is configured to include a magnet and a coil and provides a first driving force that drives the lens barrel upward and a second driving force that drives the lens barrel downward by an electromagnetic force that is generated from the magnet and the coil; a guide ball that is provided between the lens barrel and the housing and guides the motion of the lens barrel; and a position detection part that senses the position of the lens barrel, wherein the driving part drives the lens barrel upward and downward so that a preload part that provides preload returning the lens barrel to its initial position is not required.

Abstract: There is provided a semiconductor device including a base substrate; a semiconductor layer formed on the base substrate and having a mesa protrusion including a receiving groove; a source electrode and a drain electrode disposed to be spaced apart from each other on the semiconductor layer, the source electrode having a source leg and the drain electrode having a drain leg; and a gate electrode insulated from the source electrode and the drain electrode and having a recess part received into the receiving groove. The mesa protrusion has a superlattice structure including at least one trench at an interface between the mesa protrusion and the source electrode and between the mesa protrusion and the drain electrode, respectively, and the source leg and the drain leg are received in the trench.