Abstract: Numerous embodiments are disclosed. In one, a laser-processing apparatus includes a workpiece handling system having an unwind assembly including an unwind spindle operative to support an unwind material roll of a workpiece, and a rewind assembly including a rewind spindle operative to support a rewind material roll of the workpiece and receive the workpiece from the laser-processing apparatus. In another, a laser-processing apparatus includes a workpiece handling system having a web handling assembly attached to an upper structure configured to support an unwind spindle supporting a unwind material roll of a workpiece, wherein the web handling assembly is positioned within a space above the fixture. The laser-processing apparatus further includes a web tensioner assembly configured to apply a biasing force on the tensioning roller to maintain the workpiece in a desired state of tension.

Abstract: Numerous embodiments are disclosed. In one, a laser-processing apparatus includes a workpiece handling system having an unwind assembly including an unwind spindle operative to support an unwind material roll of a workpiece, and a rewind assembly including a rewind spindle operative to support a rewind material roll of the workpiece and receive the workpiece from the laser-processing apparatus. In another, a laser-processing apparatus includes a workpiece handling system having a web handling assembly attached to an upper structure configured to support an unwind spindle supporting a unwind material roll of a workpiece, wherein the web handling assembly is positioned within a space above the fixture. The laser-processing apparatus further includes a web tensioner assembly configured to apply a biasing force on the tensioning roller to maintain the workpiece in a desired state of tension.

Abstract: The semiconductor device includes a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.

Abstract: The semiconductor device comprises a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.