Patents Assigned to Electron Technologies, Inc.
  • Semiconductor Structure with Stress-Reducing Buffer Structure
    Publication number: 20150243841
    Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.
    Type: Application
    Filed: February 22, 2015
    Publication date: August 27, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Two terminal packaging
    Patent number: 9117983
    Abstract: A solution for packaging a two terminal device, such as a light emitting diode, is provided. In one embodiment, a method of packaging a two terminal device includes: patterning a metal sheet to include a plurality of openings; bonding at least one two terminal device to the metal sheet, wherein a first opening corresponds to a distance between a first contact and a second contact of the at least one two terminal device; and cutting the metal sheet around each of the least one two terminal device, wherein the metal sheet forms a first electrode to the first contact and a second electrode to the second contact.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: August 25, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Yuri Bilenko, Michael Shur, Remigijus Gaska
  • Patterned layer design for group III nitride layer growth
    Patent number: 9105792
    Abstract: A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.
    Type: Grant
    Filed: October 9, 2012
    Date of Patent: August 11, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Wenhong Sun, Jinwei Yang, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Multi-wafer reactor
    Patent number: 9087695
    Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: July 21, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Igor Agafonov, Jinwei Yang, Michael Shur, Remigijus Gaska
  • Flexible ultraviolet device
    Patent number: 9066987
    Abstract: A solution in which an ultraviolet radiation source is mounted on a flexible substrate is provided. The flexible substrate is capable of having a deformation curvature of at least 0.1 inverse meters. The flexible substrate may be incorporated within an existing enclosure or included in the enclosure. The flexible substrate can be utilized as part of a solution for disinfecting one or more items located within the enclosure. In this case, while the items are within the enclosure, ultraviolet radiation is generated and directed at the items. Wiring for the ultraviolet radiation source can be embedded within the flexible substrate and the flexible substrate can have at least one of: a wave-guiding structure, an ultraviolet absorbing surface, or an ultraviolet reflective surface. A control system can be utilized to manage generation of the ultraviolet radiation within the enclosure.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: June 30, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ohmic Contact to Semiconductor Layer
    Publication number: 20150179751
    Abstract: A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.
    Type: Application
    Filed: March 3, 2015
    Publication date: June 25, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Mikhail Gaevski, Grigory Simin, Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Methods of fabricating a chromium/titanium/aluminum-based semiconductor device contact
    Patent number: 9064845
    Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: June 23, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Xuhong Hu, Michael Shur
  • Ultraviolet-based sterilization
    Patent number: 9061082
    Abstract: A system for sterilizing at least one surface of an object is provided. The system includes a set of ultraviolet radiation sources and a set of wave guiding structures configured to direct ultraviolet radiation having a set of target attributes to a desired location on at least one surface of the object. The set of wave guiding structures can include at least one ultraviolet reflective surface having an ultraviolet reflection coefficient of at least thirty percent. Furthermore, the system can include a computer system for operating the ultraviolet radiation sources to deliver a target dose of ultraviolet radiation to the at least one target surface of the object.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: June 23, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur, Alexander Dobrinsky, Timothy James Bettles, Maxim S Shatalov
  • Storage Device Including Ultraviolet Illumination
    Publication number: 20150165079
    Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.
    Type: Application
    Filed: February 24, 2015
    Publication date: June 18, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska, Igor Agafonov
  • Device with inverted large scale light extraction structures
    Patent number: 9048378
    Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.
    Type: Grant
    Filed: June 15, 2012
    Date of Patent: June 2, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
    Patent number: 9042420
    Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: May 26, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Alexander Dobrinsky, Remigijus Gaska, Jinwei Yang
  • Storage device including ultraviolet illumination
    Patent number: 9034271
    Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: May 19, 2015
    Assignee: Sensor Electronics Technology, Inc.
    Inventors: Michael Shur, Maxim Shatalov, Timothy James Bettles, Yuri Bilenko, Saulius Smetona, Alexander Dobrinsky, Remigijus Gaska
  • Heterostructure Including a Composite Semiconductor Layer
    Publication number: 20150108428
    Abstract: A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more composite semiconductor layers. The composite semiconductor layer can include sub-layers of varying morphology, at least one of which can be formed by a group of columnar structures (e.g., nanowires). Another sub-layer in the composite semiconductor layer can be porous, continuous, or partially continuous.
    Type: Application
    Filed: October 21, 2014
    Publication date: April 23, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Rakesh Jain, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet disinfection case
    Patent number: 9006680
    Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.
    Type: Grant
    Filed: March 18, 2014
    Date of Patent: April 14, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Timothy James Bettles, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Semiconductor device with low-conducting buried and/or surface layers
    Patent number: 8994035
    Abstract: A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for removal by the low-conducting layer or a maximum interfering frequency targeted for suppression using the low-conducting layer. For example, a product of the lateral resistance and a capacitance between the low-conducting layer and the channel can be configured to be larger than an inverse of the minimum target operating frequency and the product can be smaller than at least one of: the charge-discharge time or an inverse of the maximum interfering frequency.
    Type: Grant
    Filed: November 20, 2012
    Date of Patent: March 31, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Superlattice structure
    Patent number: 8993996
    Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 31, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Remigijus Gaska, Jinwei Yang, Alexander Dobrinsky
  • Group III Nitride Heterostructure for Optoelectronic Device
    Publication number: 20150083994
    Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.
    Type: Application
    Filed: September 23, 2014
    Publication date: March 26, 2015
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Rakesh Jain, Maxim S. Shatalov, Jinwei Yang, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Medium treatment using ultraviolet light
    Patent number: 8980178
    Abstract: A system for treating a medium, such as water, with ultraviolet light is provided. The system can include an ultraviolet treatment chamber that is shaped to reduce reflections of the ultraviolet light within the ultraviolet treatment chamber and/or improve absorption of the ultraviolet light by the medium. Furthermore, the system can add an agent to the medium within the treatment chamber to further treat one or more contaminants that may be present within the medium. Still further, additional treatment, such as filtering the medium with a permeable material can be implemented within the treatment system.
    Type: Grant
    Filed: May 20, 2010
    Date of Patent: March 17, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur
  • Shaped contact layer for light emitting heterostructure
    Patent number: 8981417
    Abstract: An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: March 17, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Yuriy Bilenko, Remigijus Gaska, Michael Shur
  • Patterned substrate design for layer growth
    Patent number: 8981403
    Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.
    Type: Grant
    Filed: September 6, 2012
    Date of Patent: March 17, 2015
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S Shatalov, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska