Abstract: A semiconductor sensing device in which a sensing layer is exposed to a medium being tested in an area below and/or adjacent to a contact. In one embodiment, the device comprises a field effect transistor in which the sensing layer is disposed below a gate contact. The sensing layer is exposed to the medium by one or more perforations that are included in the gate contact and/or one or more layers disposed above the sensing layer. The sensing layer can comprise a dielectric layer, a semiconductor layer, or the like.

Abstract: A power supply for an ion engine comprises a multiphase alternator and a power converter comprising a voltage multiplier coupled to each phase of the alternator. Each voltage multiplier comprises one or more staged voltage doublers. The alternator phases may be coupled to each other in a Y configuration such that no common return line is required, and each phase of the alternator provides equal amounts of constant power in a balanced, sequential flow. The converter corrects for the alternator's inherent internal reactance, thereby minimizing the required output of the alternator and reducing the overall power required of the system. A controllable impedance can be inserted into a low voltage portion of the multiplier for selectably varying the output voltage and power of the supply.

Abstract: A micro SD adapter structure includes a casing having an insert slot, a hollow portion at the casing, an embedding groove at the hollow portion, a plurality of sunken grooves corresponding to the hollow portion, a connecting base proximate to each sunken groove; a transmitting interface at the hollow portion and having a plurality of contact portions, a terminal module at the embedding groove and having a fixing base, a plurality of terminals on the fixing base, and an end of each terminal electrically coupled to each contact portion on a surface of the connecting interface and another end corresponding to the plurality of sunken grooves; and a latch unit on the connecting base. The micro SD card can be secured into the insert slot to achieve a better electric transmitting effect and swap the micro SD card immediately when the micro SD card is inserted into the insert slot.

Abstract: A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

Abstract: The present invention provides an improved packaging structure of a memory card, such as mini SD memory card. The packaging structure comprises a substrate having a plurality of integrated circuit devices and passive devices located therein, and a metal cover having an insulating layer formed on a top portion of the metal cover. A plurality of protruding plates bending downward are formed around a circumferential area of the metal cover, and a roll-shaped fixing part is formed at a bottom portion of a particular protruding plate. The roll-shaped fixing part and the protruding plates are utilized to engage the frame with the metal cover to form a sealed structure so that the frame covers all the protruding plates and the roller-shaped fixing part of the metal cover. The integrated circuit devices and the passive devices are located within the space of the frame to form a mini SD memory card package.

Abstract: An improved nitride-based light emitting heterostructure is provided. The nitride-based light emitting heterostructure includes an electron supply layer and a hole supply layer with a light generating structure disposed there between. The light generating structure includes a set of barrier layers, each of which has a graded composition and a set of quantum wells, each of which adjoins at least one barrier layer. Additional features, such as a thickness of each quantum well, can be selected/incorporated into the heterostructure to improve one or more of its characteristics. Further, one or more additional layers that include a graded composition can be included in the heterostructure outside of the light generating structure. The graded composition layer(s) cause electrons to lose energy prior to entering a quantum well in the light generating structure, which enables the electrons to recombine with holes more efficiently in the quantum well.

Abstract: Method and system for generating electromagnetic radiation wherein one or more attributes of the electromagnetic radiation are adjusted based on a characteristic of the object being illuminated. The object characteristic can be obtained based on a sensed property of the object and used to adjust the attribute(s) of the electromagnetic radiation accordingly.

Abstract: A traveling-wave tube system and a method for protecting a cathode of a traveling-wave tube system. The system has an electron gun and a power supply that applies an electric potential between a cathode and an anode of the electron gun to generate a beam of electrons. The beam of electrons passes through a passage of a slow-wave structure. A collector electrode collects electrons from the beam of electrons generating a flow of current that flows through an ion trap power supply circuit to generate a DC voltage that is applied to the anode to repel positive ions generated.

Abstract: A multilayer zinc oxide varistor without bismuth oxide system ingredients, and having variable breakdown voltages by controlling the thickness of the ceramic material; the varistor is bismuth-free and composed of zinc oxide as the primary constituent with alkaline earth element (Ba) as first additive, at least one of transition elements of Mn, Co, Cr, or Ni as second additives, at least one of rare earth elements of Pr, La, Ce, Nd or Tb as third additives and at least one of B, Si, Se, Al, Ti, W, Sn, Sb, Na, or K as rest additives, and the bismuth-free and zinc oxide based varistor exhibits an excellent ESD (Electro-Static Discharge) withstanding characteristic.

Abstract: An arcing protection circuit for the screen and accelerator grids of an ion thruster engine includes an impedance, which in one embodiment, is fixed, and in another, is variable, coupled in series between the accelerator grid of the engine and a current return path of the grid in such a way that an increase in accelerator grid current resulting from a plasma arc occurring between the screen grid and the accelerator grid is converted by the impedance into a rapid reduction in the voltage difference between the screen and accelerator grids, thereby extinguishing the arc. The arcing protection circuit also includes a monitoring circuit coupled to the accelerator grid that senses an increase in the voltage on the accelerator grid resulting from the plasma arc, and in response thereto, causes the accelerator grid power supply to reduce the voltage on the accelerator grid.

Abstract: A nitride-based semiconductor structure is provided. The structure includes an active layer that comprises an inverted quantum well structure that includes Indium and Nitrogen. The structure can be used to create a field effect transistor. In this case, the active layer forms an inverted active device channel. By including Indium and forming the inverted active device channel, a device having improved performance characteristics can be manufactured. Further, additional improvements, such as one or more additional layers, a second gate contact, and/or one or more field plates can be included in the device to obtain the desired performance characteristics.

Abstract: A micro SD adapter structure includes a casing having an insert slot which is a hollow structure in the shape of a mini SD card, a hollow portion at the casing, a plurality of fixing grooves on the casing and corresponding to the hollow portion, a plurality of sunken grooves on the hollow portion, a connecting base proximate to each sunken groove; a transmitting unit having a conducting interface on the hollow portion and the conducting interface is electrically coupled to a plurality of terminals which are installed in the fixing groove of the casing and corresponding to a plurality of sunken grooves; and a latch unit disposed on the connecting base. The micro SD card can be secured into the insert slot to achieve a better electric transmitting effect and swap the micro SD card immediately when the micro SD card is inserted into the insert slot.

Abstract: A MICRO SD card includes a casing composed of a base and a top cover, an insertion slot is defined in an end of the casing and a plurality of first recesses are defined in an inner surface of the base. A recessed area is defined in the inner surface of the base so as to receive a circuit board therein. The top cover has a plurality of ridges extending from an underside thereof and each ridge has a second recess defined therein. A plurality of terminals each have a projection which is engaged with one of the second recesses. A first leg and a second leg respectively extend from two ends of each of the projections. The first leg extends into the insertion slot and the second leg has a protrusion which is compressed onto the circuit board by the ridge corresponding thereto.

Abstract: The present invention provides a micro security digital card including: a first shell having a receiving space; a second shell with a periphery thereof forming an embedding part; an integrated circuit with one side thereof provided with a plurality of contacts; and an intermediate element disposed between the second shell and the integrated circuit. The receiving space of the first shell sequentially receives the second shell, the intermediate element and the integrated circuit. The embedding part of the second shell is embedded into the first shell such that the second shell tightly combines with the first shell. The integrated circuit tightly combines with the second shell by means of the intermediate element.

Abstract: Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each element to assist in generating a high quality nitride-based film.

Abstract: A multimedia memory card comprises a case cover, a body and a circuit board. A first inserting portion perpendicularly extends from one edge of the case cover. A second inserting portion extends from one end of the first inserting portion. The body has a holding space therein and a supporting baffle formed on inner sides thereof. The circuit board is provided with an electronic component on one surface thereof. The electronic component is received in the holding space of the body. The circuit board is joined onto the supporting baffle on inner sides of the body. The case cover is joined onto one side of the body, and the first inserting portion and the second inserting portion are inserted inside the body, thereby making the case cover and the body tightly joined together.

Abstract: A multimedia memory card comprises a cover body having a top surface and a side wall extending from the periphery of the top surface and a control circuit. The top surface and the side wall form a holding space. The circuit board has at least a first flash memory, a second flash memory, a control chip, and a plurality of passive components. The first flash memory is disposed adjacent to the second flash memory. The control chip and the passive components are disposed on one side of the first flash memory or second flash memory. The holding space of the cover body is designed to hold the first flash memory, the second flash memory, the control chip, and the passive components of the circuit board.

Abstract: A white light emitting device and method that generate light by combining light produced by a white light source with light produced by at least one supplemental light emitting diode (LED). The supplemental light can be used to adjust one or more properties of the generated light. Adjustments can be made to the generated light based on feedback.

Abstract: An improved light emitting heterostructure. In particular, a nitride-based light emitting heterostructure is provided that includes a light generating structure and a distributed semiconductor heterostructure Bragg reflector structure formed above the light generating structure. In operation, the light generating structure generates light, a portion of which is reflected by the distributed semiconductor heterostructure Bragg reflector structure, thereby increasing the total amount of light that can be emitted from the heterostructure.

Abstract: A semiconductor structure having a textured nitride-based layer. The textured nitride-based layer can be formed above one or more crystalline nitride layers and a substrate, and can be formed into any desired pattern. The semiconductor structure can be incorporated as part of, for example, a field effect transistor, a light emitting diode, or a laser.