Abstract: The present invention provides an electrochemical system and process for the production of very high purity hydride gases and the feed product streams including these hydride gases at constant composition over extended periods of time. The processes and apparatuses of the invention can employ a lined pressure vessel (1) within which resides an electrochemical cell including cathode (2) and anode (3) material. The hydride gas produced within the vessel exits through port (4) to a manifold which contains automatic valve (8) to allow exit of the hydride gas. The hydride gas passes through one or more filters (7). The gas finally exits the manifold through a pressure regulator (6) to the point where it is utilized in semiconductor fabrication. A source of gas (11) for mixing with the hydride gas is also included.
Abstract: An electrochemical apparatus and method for supplying volatile hydrides of sufficient purity, at the proper pressure, and in the required volume, for direct introduction into a chemical vapor deposition reactor in which semiconductors are manufactured and doped.
Abstract: The present invention involves a method of chemically removing a mobile atom from a mobile atom-containing reactant molecule. The method includes: (a) absorbing the mobile atom-containing reactant on one side of a solid, mobile atom transmissive membrane; (b) passing the mobile atom through the membrane to the opposite surface; (c) reacting the mobile atom; (d) desorbing the mobile atom depleted reactant molecule from the reaction side of the membrane. The mobile atom may be hydrogen and the method preferably involves controlling the flux of mobile atoms through the membrane to control the rate of removal of mobile atoms from the first reactant molecule. Electrically conductive, atom permeable, biasing means are used to control the surface potential, e.g. biasing means on the hydrogen removal reaction side as well as biasing means on the opposite side of the membrane. The reactor used in the method is another aspect of the present invention.
Abstract: Disclosed is a method of determining the state of charge and discharge of a host material, e.g., a hydride forming hydrogen storage material, or the interstitial content of an alloy material by the high frequency measurement of the time varying transfer function thereof.