Abstract: Disclosed is fluorocarbon-based dry etching gas which is free of global environmental problems and a dry etching method using a plasma gas obtained therefrom. The dry etching gas includes a fluorinated ether of carbon, fluorine, hydrogen and oxygen and having 2-6 carbon atoms.
Type:
Grant
Filed:
July 2, 1999
Date of Patent:
February 4, 2003
Assignees:
Agency of Industrial Science and Technology, The Mechanical Social Systems Foundation of Mita
Building, Electronic Industries Association of Japan, Asahi Glass Co., Ltd., Daikin Industries, Ltd. of Umeda Center Building
Abstract: A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 1010/cm3 is generated. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms are preferably used.
Type:
Grant
Filed:
April 30, 1999
Date of Patent:
May 7, 2002
Assignees:
Japan as represented by the Director General of the Agency of
Industrial Science and Technology, The Mechanical Social Systems Foundation, Electronic Industries Association of Japan, Nippon Zeon Co., Ltd.
Abstract: A gaseous composition for dry etching, comprising a perfluorocycloolefin and 1 to 40% by mole, based on the perfluorocycloolefin, of at least one oxygen ingredient selected from oxygen gas and oxygen-containing gaseous compounds. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms, are preferably used.
Type:
Grant
Filed:
April 30, 1999
Date of Patent:
November 27, 2001
Assignees:
Japan as represented by Director General of the Agency of
Industrial Science and Technology, The Mechanical Social Systems Foundation, Electronics Industries Association of Japan, Nippon Zeon Co., Ltd.