Abstract: A method and apparatus for programming a mass storage device of the type having a plurality of memory word locations. The memory word locations are organized into a plurality of addressable columns and addressable rows, each memory word location capable of storing one byte word in response to at least two programming steps. Each programming step for a selected memory word location requires a predetermined time period before a subsequent programming step can be processed by the selected memory word location. A first programming step is applied to a first memory word location. The first programming step is applied sequentially to other memory word locations while the first programming step is being processed by the first memory word location. A second programming step is applied to the first memory word location while the first programming step is being process by the other memory word locations.