Patents Assigned to Electronic & Technology
  • SEMICONDUCTOR LIGHT-RECEIVING ELEMENT
    Publication number: 20160087398
    Abstract: According to one embodiment, a semiconductor light-receiving element, includes a light-receiving part provided on a substrate and having a semiconductor multilayer structure of a circular outer shape, a optical input part formed of a peripheral portion of the semiconductor multilayer structure, and having a tapered front end, and a silicon-thin-line waveguide configured to couple light with the optical input part. The waveguide includes a linear part extending through the optical input part to an at least one area of an upper-side area and a lower-side area of the light-receiving part, and a spiral part connected to the linear part and formed in the at least one area.
    Type: Application
    Filed: September 10, 2015
    Publication date: March 24, 2016
    Applicants: KABUSHIKI KAISHA TOSHIBA, Photonics Electronics Technology Research Association
    Inventors: Haruhiko YOSHIDA, Kazuya OHIRA, Mizunori EZAKI
  • AAO-Based Light Guiding Structure and Fabrication Thereof
    Publication number: 20160077292
    Abstract: A light guiding structure is provided. The structure includes an anodized aluminum oxide (AAO) layer and a fluoropolymer layer located immediately adjacent to a surface of the AAO layer. Light propagates through the AAO layer in a direction substantially parallel to the fluoropolymer layer. An optoelectronic device can be coupled to a surface of the AAO layer, and emit/sense light propagating through the AAO layer. Solutions for fabricating the light guiding structure are also described.
    Type: Application
    Filed: September 14, 2015
    Publication date: March 17, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet Illuminator for Footwear Treatment
    Publication number: 20160074547
    Abstract: An ultraviolet (UV) footwear illuminator for footwear treatment is disclosed. In one embodiment, the UV footwear illuminator includes an insert adapted for placement in an article of footwear. At least one UV radiation source is located in the insert and is configured to emit UV radiation in the footwear through a transparent window region formed in the insert. A control unit is configured to control at least one predetermined UV radiation characteristics associated with the radiation emitted from each UV radiation source. A power supply is configured to power each UV radiation source and the control unit.
    Type: Application
    Filed: September 14, 2015
    Publication date: March 17, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • Ultraviolet reflective rough adhesive contact
    Patent number: 9287449
    Abstract: A device including a first semiconductor layer and a contact to the first semiconductor layer is disclosed. An interface between the first semiconductor layer and the contact includes a first roughness profile having a characteristic height and a characteristic width. The characteristic height can correspond to an average vertical distance between crests and adjacent valleys in the first roughness profile. The characteristic width can correspond to an average lateral distance between the crests and adjacent valleys in the first roughness profile.
    Type: Grant
    Filed: January 9, 2014
    Date of Patent: March 15, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Maxim S. Shatalov, Alexander Lunev, Alexander Dobrinsky, Jinwei Yang, Michael Shur
  • Semiconductor material doping
    Patent number: 9287442
    Abstract: A solution for designing and/or fabricating a structure including a quantum well and an adjacent barrier is provided. A target band discontinuity between the quantum well and the adjacent barrier is selected to coincide with an activation energy of a dopant for the quantum well and/or barrier. For example, a target valence band discontinuity can be selected such that a dopant energy level of a dopant in the adjacent barrier coincides with a valence energy band edge for the quantum well and/or a ground state energy for free carriers in a valence energy band for the quantum well. Additionally, a target doping level for the quantum well and/or adjacent barrier can be selected to facilitate a real space transfer of holes across the barrier. The quantum well and the adjacent barrier can be formed such that the actual band discontinuity and/or actual doping level(s) correspond to the relevant target(s).
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: March 15, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Maxim S Shatalov, Remigijus Gaska, Jinwei Yang, Michael Shur, Alexander Dobrinsky
  • Deep ultraviolet light emitting diode
    Patent number: 9287455
    Abstract: A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a carbon doped layer (e.g., a non-percolated or percolated carbon atomic plane).
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: March 15, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Remigijus Gaska, Jinwei Yang
  • Method for providing and recognizing transmission mode in digital broadcasting
    Patent number: 9288467
    Abstract: The present invention relates to a method for selecting an appropriate mode when performing a new broadcast, such as a 3D stereo broadcast, a UHDTV broadcast, and a multi-view broadcast, among others, while maintaining compatibility with existing broadcasting channels in an MPEG-2-TS format for transmitting and receiving digital TV, and to a method for recognizing a descriptor. To this end, the present invention suggests providing the descriptor which is related to synthesizing left and right images using the type of stream, existence of the descriptor, and a frame-compatible mode flag.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: March 15, 2016
    Assignee: Korea Electronics Technology Institute
    Inventors: Byeong Ho Choi, Je Woo Kim, Hwa Seon Shin
  • Method for transmitting contents in a smart home environment
    Patent number: 9288072
    Abstract: When a user wants to move or share the contents, information on network status, a position of a terminal, and a property of the terminal is collected and displayed intuitively to the user. Then, quality of the contents is adjusted in accordance with selection of the user adaptively. The contents can be displayed through the selected terminal with adaptively adjusted quality based on the information on network status, the position of a terminal, and the property of the selected terminal.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: March 15, 2016
    Assignee: Korea Electronics Technology Institute
    Inventors: Jae Won Moon, Kyung Won Kim, Tae Beom Lim, Kwang Sue Chung, Dong Chil Kim, Doo Yeol Yoon
  • Semiconductor layer including compositional inhomogeneities
    Patent number: 9281441
    Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.
    Type: Grant
    Filed: May 23, 2014
    Date of Patent: March 8, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Rakesh Jain, Maxim S. Shatalov, Alexander Dobrinsky, Jinwei Yang, Remigijus Gaska
  • Ultraviolet System for Disinfection
    Publication number: 20160058020
    Abstract: Ultraviolet radiation is directed within an area. The target wavelength ranges and/or target intensity ranges of the ultraviolet radiation sources can correspond to at least one of a plurality of selectable operating configurations including a sterilization operating configuration and a preservation operating configuration.
    Type: Application
    Filed: November 10, 2015
    Publication date: March 3, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Michael Shur, Maxim S. Shatalov, Timothy James Bettles, Yuri Bilenko, Alexander Dobrinsky, Remigijus Gaska
  • Packaging for Ultraviolet Optoelectronic Device
    Publication number: 20160064631
    Abstract: A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be placed adjacent to the optoelectronic device and/or a device package on which the optoelectronic device is mounted. Subsequently, the ultraviolet transparent polymer material can be processed to cause the ultraviolet transparent polymer material to adhere to the optoelectronic device and/or the device package. The ultraviolet transparent polymer can be adhered in a manner that protects the optoelectronic device from the ambient environment.
    Type: Application
    Filed: November 11, 2015
    Publication date: March 3, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Saulius Smetona, Alexander Dobrinsky, Michael Shur, Mikhail Gaevski
  • Deep Ultraviolet Light Emitting Diode
    Publication number: 20160064601
    Abstract: A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.
    Type: Application
    Filed: November 9, 2015
    Publication date: March 3, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Maxim S. Shatalov, Michael Shur, Alexander Dobrinsky
  • Imaging lens assembly
    Patent number: 9274312
    Abstract: An imaging lens assembly includes first, second, third and fourth optical lens elements that are arranged sequentially from an object side to an image side along an optical axis and that respectively have negative, positive, positive and negative refractive powers, and a fixed aperture stop that is disposed between the first and second optical lens elements. The fourth optical lens element has object-side surface and an image-side surface that has at least an inflection point. The imaging lens assembly satisfies the optical condition of 1.8<TL/f<2.4, in which, TL represents a distance from an object-side surface of the first optical lens element to an imaging plane, and f represents a focal length of the imaging lens assembly.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: March 1, 2016
    Assignee: Ability Opto-Electronics Technology Co., LTD.
    Inventor: Hung-Wen Lee
  • Ohmic contact to semiconductor
    Patent number: 9269788
    Abstract: A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: February 23, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur, Jinwei Yang, Alexander Dobrinsky, Maxim S Shatalov
  • Rotating vacuum heat treatment equipment
    Patent number: 9267185
    Abstract: A rotating vacuum heat treatment equipment, applicable for heat treatment of rare earth permanent magnetic devices, hydrogen pulverization of rare earth permanent magnetic alloy, and heat treatment of mechanical electronic components, mainly comprises: a vacuum unit, a gas cooling device, and a vacuum furnace, wherein an insulating layer is provided in the vacuum furnace, a heater is provided in the insulating layer, a rotating cylinder is provided in the heater, a nozzle, connected with pipelines of the gas cooling device, is provided on the insulating layer, and cooled gas is sprayed to the rotating cylinder via the nozzle.
    Type: Grant
    Filed: October 7, 2013
    Date of Patent: February 23, 2016
    Assignee: China North Magnetic & Electronic Technology Co., LTD
    Inventor: Haotian Sun
  • Light emitting diodes for simulation of missile signatures
    Patent number: 9267770
    Abstract: An emitting structure for simulating an irradiance signature of a missile is provided. The emitting structure includes one or more radiation sources, each of which includes at least one ultraviolet radiation source and at least one infrared radiation source. The emitting structure also includes a spherical shell and a mechanism for positioning the radiation source(s) along a three dimensional boundary of the spherical shell. The emitting structure can locate and operate one of the radiation sources to simulate the irradiance signature of the missile.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: February 23, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Alexander Dobrinsky, Maxim Shatalov, Michael Shur
  • Device with Inverted Large Scale Light Extraction Structures
    Publication number: 20160049551
    Abstract: An interface including roughness components for improving the propagation of radiation through the interface is provided. The interface includes a first profiled surface of a first layer comprising a set of large roughness components providing a first variation of the first profiled surface having a first characteristic scale and a second profiled surface of a second layer comprising a set of small roughness components providing a second variation of the second profiled surface having a second characteristic scale. The first characteristic scale is approximately an order of magnitude larger than the second characteristic scale. The surfaces can be bonded together using a bonding material, and a filler material also can be present in the interface.
    Type: Application
    Filed: June 2, 2015
    Publication date: February 18, 2016
    Applicant: Sensor Electronic Technology, Inc.
    Inventors: Maxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
  • High-voltage normally-off field effect transistor including a channel with a plurality of adjacent sections
    Patent number: 9263533
    Abstract: A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.
    Type: Grant
    Filed: September 19, 2012
    Date of Patent: February 16, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Grigory Simin, Michael Shur, Remigijus Gaska
  • Ohmic contact to semiconductor
    Patent number: 9263538
    Abstract: An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
    Type: Grant
    Filed: November 15, 2011
    Date of Patent: February 16, 2016
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Remigijus Gaska, Michael Shur
  • Therapy apparatus
    Patent number: D750793
    Type: Grant
    Filed: October 2, 2014
    Date of Patent: March 1, 2016
    Assignee: Beijing Choice Electronic Technology Co., Ltd.
    Inventor: Shuhai Liu