Patents Assigned to Electronical Laboratory, Agency of Industrial Science and Technology
  • Patent number: 5793154
    Abstract: A field emission element including a gate and an emitter and capable of penting any of the element oxide layer from being formed on a tip of the emitter to prevent a decrease in emission current, unstable operation and an increase in noise. The gate has a surface formed of a material of oxygen bonding strength higher than that of a material for at least a tip surface of the emitter, so that oxygen atoms and molecules containing oxygen entering the gate may be captured by adsorption on the gate to prevent formation of any oxide layer on the emitter. When a portion of the emitter other than the tip surface is formed of a material of oxygen bonding strength higher than that of the material for the tip surface, formation of any oxide layer on the tip surface of the emitter is minimized.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: August 11, 1998
    Assignees: Futaba Denshi Kogyo K.K., Electronical Laboratory, Agency of Industrial Science and Technology
    Inventors: Shigeo Itoh, Teruo Watanabe, Makoto Miyamori, Norio Nishimura, Junji Itoh, Seigo Kanemaru