Patents Assigned to Electronics & Telecommunications Research Inst.
  • Patent number: 5029165
    Abstract: A method of allotting the signal links and routing the signal messages in the signalling transfer points of a common channel signalling system which are level type signalling transfer points for carrying out message transfer functions based on the common channel signalling No. 7 protocol of the ITTCC. Each signalling transfer point includes a signalling link selection value composed of a number of bits, signal data links, signal links, signal network functions, clusters and groups, connected in such a manner that a signalling transfer point includes a certain number of signal network functions, each signal network function including a certain number of signal links, each signal link being connected to one signal data link. The signalling transfer point includes a number of clusters of signal links (equal to the number of signal network functions) grouped in a plurality of clusters (equal to the number of signal links).
    Type: Grant
    Filed: June 19, 1989
    Date of Patent: July 2, 1991
    Assignees: Electronics and Telecommunications Research Inst., Korea Telecommunications Authority
    Inventors: Yanghee Choi, Yunghee Lee, Yungsik Bak, Yunghwan Cha, Daeyung Chun, Yungman Kang
  • Patent number: 4998267
    Abstract: Unwanted distortion of the planar configuration of a carbon-based X-ray lithography mask, that would otherwise occur during selective etching of the (silicon) support substrate, is prevented by incorporating a compensation layer of inorganic material that effectively offsets the internal compressive stress characteristic of the carbon. For this purpose, on a top, planar surface of a silicon substrate, a multiple layer structure containing a first layer of carbon having an internal compressive stress characteristic and a second layer of inorganic material having an internal tensile stress characteristic, is plasma-deposited. The tensile stress characteristic of the inorganic layer compensates for the compressive stress characteristic of the carbon layer and causes the composite structure to retain its substantially planar configuration after the underlying silicon substrate has been etched in the course of obtaining a rim structure on which the X-ray transmissive structure is supported.
    Type: Grant
    Filed: June 23, 1989
    Date of Patent: March 5, 1991
    Assignee: Korea Electronics & Telecommunications Research Inst.
    Inventors: Jaesin Lee, Jinyung Kang