Abstract: A cup-type plating apparatus includes a plating tank having a support section provided on an upper end thereof for holding a wafer; a solution feed section provided at the center of a bottom portion of the plating tank; an anode disposed within the plating tank; and a diaphragm for separating the anode from the wafer. The diaphragm is slanted upward from the solution feed section toward the periphery of the plating tank. A gas release port is provided in the plating tank at such a position as to release bubbles collected under an upper end portion of the diaphragm.

Abstract: The present invention provides a technique for removing air remaining on the peripheral edge of a surface to be plated in a conventional wafer plating apparatus, and to provide a wafer plating apparatus capable of performing a more uniform plating up to the peripheral edge of the surface to be plated, and which is further capable of performing plating even with respect to a wafer coated with a seed metal. This wafer plating apparatus includes a wafer clamp 6 for holding a wafer 4, a wafer support member 7 for supporting the periphery of the surface 5 to be plated of the wafer 4, and a plating tank 2 for circulating a plating solution while making the plating solution overflow from an upper opening of the tank. The wafer plating apparatus is arranged so as to perform plating, while the surface 5 to be plated is laid face down, being in contact with the surface of the plating solution, in a state in which the wafer 4 is clamped by the wafer clamp 6 and the wafer support member 7.

Abstract: The present invention provides a technique for removing air remaining on the peripheral edge of a surface to be plated in a conventional wafer plating apparatus, and to provide a wafer plating apparatus capable of performing a more uniform plating up to the peripheral edge of the surface to be plated, and which is further capable of performing plating even with respect to a wafer coated with a seed metal. This wafer plating apparatus includes a wafer clamp 6 for holding a wafer 4, a wafer support member 7 for supporting the peripheral edge of the surface 5 to be plated, and a plating tank 2 which circulates a plating solution while making the plating solution overflow from an upper opening of the tank. The wafer plating apparatus is arranged so as to perform plating, while the surface 5 to be plated is laid face down, being in contact with the surface of the plating solution, in a state in which the wafer 4 is clamped by the wafer clamp 6 and the wafer support member 7.

Abstract: It is an object of the present invention to provide a technology capable of plating satisfactorily even when wafers with a seed metal is plated in sequence by utilizing a cup-type plating apparatus. Plating solution adhered on a support 2 is removed between an initial and a subsequent plating processes by a cleaning apparatus 5 for a support 2 on a cup-type plating tank. The cleaning apparatus 5 comprises a first arm 9 of which distal end is positionable at the center of an upper portion of an opening of a plating tank 1, and a second aim 12 which is mounted at one end thereof to the distal end of the first arm 9, is provided at the other end thereof with a cleaner 11 and is pivotal about the distal end of the first arm 9.

Abstract: A plating method by means of an electroless gold solution under air supply in the form of air bubbles from air dispersing bodies placed on the bottom of a plating tan, whereby more uniform plating can be achieved and the life of the plating solution can be prolonged. Air bubbles are uniformly supplied over the entire region in the plating tank which corresponds to a plating region of a substance to be plated and placed in the plating tank, and the air supply is adjusted depending on the liquid temperature of the plating solution.

Abstract: The present invention provides an electroless gold plating solution which does not precipitate gold at high concentrations of thallium or lead compound, while retaining its effects such as increased deposition rate and larger crystallite sizes in the deposited layer. The electroless gold plating solution according to the invention contains 0.1-10 g/l of a chelating agent, such as diethylenetriaminepentaacetic acid (DTPA), ethylenediaminetetraacetic acid or nitrilotriacetic acid, DTPA being a preferable agent.

Abstract: The present invention provides an electroless gold plating solution which does not precipitate gold at high concentrations of thallium or lead compound, while retaining its effects such as increased deposition rate and larger crystallite sizes in the deposited layer. The electroless gold plating solution according to the invention contains 0.1-10 g/l of a chelating agent, such as diethylenetriaminetetraacetic acid (DTPA), ethylenediaminetetraacetic acid or nitrilotriacetic acid, DTPA being a preferable agent.

Abstract: An object is to provide practical silver plating technique, high-speed silver plating technique and silver strike plating technique which have, respectively, substantially the same performance as cyanide baths without use of any toxic cyanide. A hydantoin compound of the following general formula is contained as a complex-forming agent ##STR1## [wherein R.sub.1, R.sub.3 and R.sub.5 independently represent hydrogen, an alkyl group having 1-5 carbon atoms, an aryl group or an alcohol].

Abstract: The present invention provides an electroless gold plating solution which offers deposition layers exactly onto predetermined areas on the surface of the workpiece, without undesirable spread of plated areas. The electroless gold plating solution according to the invention contains 5-500 mg/l, or preferably 10-100 mg/l, or sodium nitrobenzenesulfonate and/or p-nitrobenzoic acid as a reduction inhibitor.

Abstract: The present invention provides an electroless gold plating solution which offers deposition layers exactly onto predetermined areas on the surface of the workpiece, without undesirable spread of prated areas. The electroless gold plating solution according to the invention contains 2-20 g/l of dimethylamine as amine group.

Abstract: The invention relates to platinum electroforming and platinum electroplating capable of preparing a deposited platinum material having high hardness and increased thickness and size. The platinum electroforming or electroplating bath comprises at least one compound selected from the group consisting of chloroplatinic acid, chloroplatinates of alkali metals, hydrogen hexahydroxoplatinate, and hexahydroxoplatinates of alkali metals, 2-100 g/l as platinum and a hydroxylated alkali metal, 20-100 g/l.

Abstract: The invention relates to platinum electroforming and platinum electroplating capable of preparing a deposited platinum material having high hardness and increased thickness and size utilizing an electrolyte bath comprising at least one compound selected from the group consisting of chloroplatinic acid, chloroplatinates of alkali metals, hydrogen hexahydroxoplatinate, and hexahydroxoplatinates of alkali metals, 2-100 g/l as platinum; a hydroxylated alkali metal, 20-100 g/l; and a soluble carboxylate.

Abstract: Disclosed is a plating device for plating a wafer, in which the resist film formed on a wafer need not preliminarily be removed, and plurality of needle-like electrodes can stably and reliably be contacted with the wafer to secure electrical continuity therewith and attachment of the plating metal onto the needle-like electrodes can effectively be prevented.

Abstract: The invention relates to platinum electroforming and platinum electroplating capable of preparing a deposited platinum material having high hardness and increased thickness and size. The platinum electroforming or electroplating bath comprises at least one compound selected from the group consisting of chloroplatinic acid, chloroplatinates of alkali metals, hydrogen hexahydroxoplatinate, and hexahydroxoplatinates of alkali metals, 2-100 g/l as platinum and a hydroxylated alkali metal, 20-100 g/l.

Abstract: A metallic powder which is formed by the extrusion, from multiple microscopic nozzle holes, of molten metal, which while falling and cooling changes shape from a droplet to a generally spherical shape and then solidifies, this microscopic metallic powder (around 20-90 .mu.m in size for example) having non-curved sections in parts of the generally curved surface and being suitable as solder.

Abstract: A process and an apparatus for recovering a precious metal compound, in which the precious metal compound is separated from impurity metals by use of a reverse osmotic membrane, and the separated precious metal compound is recovered in a concentrated state through electrodialysis employing anion-exchange and cation-exchange membranes, whereby the precious metal compound in a process liquid can be recovered efficiently. When the recovered precious metal compound is added in the as-is form to precious metal plating solution, it is possible to control the plating solution.

Abstract: The a system includes a visual inspection unit, a plating thickness inspection unit, and a shape inspection unit, suitably arranged in combination on the inspection line for automatic inspection of stains, flaws, glossiness or deformation in plated IC lead frames. The system can be used by an inventive method to correct errors in positional relation between a reference image and images input from an inspection camera, to obtain a comparison between a reference luminance curve and the individual luminance curves and the correlation between reflectivity and the corresponding area, and to obtain a comparison between the reference correlation and individual correlations to thereby enhance automation and precision in inspection IC lead frames.

Abstract: This invention relates to an electro-plating device which is suitable for plating minute portions on protruding tip ends of a connector terminal. This invention device uses a plating solution supplying member in the form of a thin box which is erected upon a plating solution supplying box and which has a thickness small enough to be inserted between opposing plating areas. The plating areas are a pair of protruding tip ends of the connector terminal which move in contact with or near the supplying member. The plating solution supplying member comprises a combination of a supporting member made of an insulating sheet having a vertical section substantially shaped like an inverted letter U and a plating solution retaining member of a net or porous sheet which is supported by the supporting member to drape over the outer surfaces thereof.

Abstract: The present invention relates to a high-purity palladium-nickel alloy plating, and particularly to a high-purity palladium-nickel alloy plating solution and process suitable as plating for electronic parts, said plating solution and process producing a deposit having a nickel content of 1 to 15%, an article plated with said alloy, and an article plated with said alloy and plated further with gold or a gold alloy.

Abstract: This is a plating device for partially electroplating connector terminals at the tip, the target portions to be plated being a pair of forked portions of each connector terminal that are opposing to each other. In this partial plating device, a plating solution supply member to be inserted between the pair of target portions in the connector terminals comprises a support member, anode, net member and winding means. The support member has a top portion substantially forming an arrowhead with slanted guide planes on both sides. An opening is provided at or near the tip of this top portion to allow seepage of the plating solution. The net member covers the top portion of the support at its tip as well as the surface in its vicinity, the net member being freely wound up in the direction intersecting the passage line by the winding means and forming a supply section for the plating solution at a location corresponding to said passage line.