Abstract: This invention relates to apparatus for sensing, remotely, the temperature of a semi-conductor wafer and includes means for shining a single frequency light 11 onto the surface 12 of a semi-conductor wafer 13 so that some of that light is scattered. The scattered light is focused by a lens 15 and the single frequency is filtered out of the scattered light by notch filter 17. The filtered beam is split by beam splitter 18 and the resultant two beams are filtered so that they respectively pass only the Stokes and anti-Stokes frequencies respectively. The intensities of these respective light beams are then measured and from these the temperature of the semi-conductor wafer is calculated.

Abstract: In order to subject a workpiece, such as a semiconductor wafer, to elevated pressures the workpiece is enclosed in a void (16) between two enclosure parts (6,7) which have been forced together by upper and lower actuators (12,13). The enclosure parts (6,7) are themselves enclosed in a vacuum chamber (1) evacuatable by a vacuum pumping system. Gas is then supplied from a suitable pressure source via a pipe (17) into void (10), thereby to subject the workpiece to elevated pressure. Heating means may be provided to permit the workpiece to be subject to elevated temperature.

Abstract: To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.

Abstract: In order to subject a workpiece, such as a semiconductor wafer, to elevated pressures the workpiece is enclosed in a void (16) between two enclosure parts (6,7) which have been forced together by upper and lower actuators (12,13). The enclosure parts (6,7) are themselves enclosed in a vacuum chamber (1) evacuatable by a vacuum pumping system. Gas is then supplied from a suitable pressure source via a pipe (17) into void (10), thereby to subject the workpiece to elevated pressure. Heating means may be provided to permit the workpiece to be subject to elevated temperature.

Abstract: An apparatus for supporting a workpiece has an enclosure, a means for reducing the pressure and a platen on which the workpiece is mounted. A heating mechanism is located within the platen and the platen is coated with a high emissivity material, which facilitates the radiative heat transfer between the platen and the workpiece. Consequently, the workpiece can be rapidly raised to a specific temperature. This apparatus is particularly applicable to the supporting of a semiconductor wafer within a vacuum system.