Patents Assigned to Elektroschmelzwerk Kempten GmbH
  • Patent number: 4803183
    Abstract: The invention is a molded body of polycrystalline aluminum nitride having a density of at least 99.8% TD and comprising:at least 99% by weight AlNup to 0.35% by weight residual oxygenup to 0.35% by weight residual carbon andup to 0.03% by weight metallic impurities (Fe, Si, Ca, Mg).In the molded body, the aluminum nitride is present in the form of a single phase, homogeneous, isotropic microstructure having a maximum grain size of 5 .mu.m. The residual oxygen and the residual carbon are present in the form of a solid solution in the aluminum nitride lattice and caromografically not detectable as separate phase(s) up to a magnification of 2400 times. The molded bodies have a bending strength measured according to the 4-point method, at room temperature and up to about 1400.degree. C., of at least 500 N/mm.sup.2, a predominantly transcrystalline rupture modulus and a thermal conductivity at 300 K of at least 150 W/mK.
    Type: Grant
    Filed: February 20, 1987
    Date of Patent: February 7, 1989
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Karl-Alexander Schwetz, Wolfgang Grellner, Klaus Hunold, Max Mohr, Alfred Lipp
  • Patent number: 4756482
    Abstract: The invention is a process for the manufacture of sinterable silicon carbide and/or boron carbide powders having a maximum particle size of 1 .mu.m and finer. The process is carried out by wet grinding in aqueous suspension using mills charged with a grinding medium and with the addition of antioxidants in the presence of surfactants and subsequent wet chemical treatment with an aqueous potassium hydroxide solution. The wet grinding can be carried out, for example, with the addition of hydroquinone in the presence of quaternary ammonium salts and the wet chemical treatment with a 5-50% by weight aqueous potassium hydroxide solution under normal pressure at temperatures in the range of from room temperature to the boiling temperature of the reaction mixture or under elevated pressure at temperatures of up to 300.degree. C.
    Type: Grant
    Filed: July 22, 1987
    Date of Patent: July 12, 1988
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Peter Matje, Karl A. Schwetz
  • Patent number: 4748313
    Abstract: An apparatus for the vaporization of inorganic compositions uses a photon-generating thermal source of radiation heat in a continuously operated vacuum vaporization processes. The apparatus includes a shaped body of the compacted vaporizable material prepared from pulverulent inorganic compositions having melting points greater than 1000.degree. C., optionally mixed with elements having melting points greater than 1000.degree. C., and a thermal source of radiation heat, the vaporizable material and a thermal source of radiation heat being coupled without contact. The vaporizable material is constructed as preferably a porous, shaped body and the shaped body and/or the thermal source of radiation heat are movably arranged relative to each other.
    Type: Grant
    Filed: August 15, 1986
    Date of Patent: May 31, 1988
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventor: Andre de Rudnay
  • Patent number: 4743571
    Abstract: Polycrystalline sintered bodies are provided consisting of at least 66% by weight of a crystalline Si.sub.3 N.sub.4 phase, of which at least 90% by weight is in the beta-modification, and of up to 34% by weight of secondary intergranular grain boundary phases of oxide, carbide and/or nitride. At least 25% by weight of the secondary grain boundary phases consists of a quasi-ternary crystalline compound in the E.sub.1 --E.sub.2 --E.sub.3 triangle of the Ga.sub.2 O.sub.3 --La.sub.2 O.sub.3 -Al.sub.2 O.sub.3 ternary system called "Gala", the "Gala" compound being prepared from gallium oxide, lanthanum oxide and aluminum oxide prior to producing the sintered bodies.The polycrystalline sintered bodies are produced by sintering with and without application of pressure from silicon nitride powders having a portion of impurities not exceeding 4.0% by weight, sintering additives of oxides and optionally other refractory admixtures of carbides and/or nitrides.
    Type: Grant
    Filed: February 26, 1987
    Date of Patent: May 10, 1988
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Detlef Steinmann, Alfred Lipp, Hubert Thaler, Dietrich Lange
  • Patent number: 4732620
    Abstract: The invention is an improved theroelement which comprises a graphite/boron carbide thermocouple, the arms of which are constructed as a tube and a rod, arranged concentrically inside the tube, which are electrically connected at one end. One of the arms of the thermocouple consists essentially of boron carbide formed from self bonding boron carbide by pressureless sintering. Prefabricated sleeves of high-purity, boron-oxide-free hexagonal boron nitride are used between the arms of the thermocouple as spacers. Only the end of the arm of the thermocouple constructed as a rod is secured in an electrically conductive connecting piece and the arm is freely mobile in the direction towards the cold junction.
    Type: Grant
    Filed: March 14, 1986
    Date of Patent: March 22, 1988
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Klaus Hunold, Alfred Lipp, Klaus Reinmuth, Peter Arnold
  • Patent number: 4715812
    Abstract: Kiln furniture for supporting ceramic products to be baked in a high-speed baking kiln includes an inorganic fibrous material needled blanket having a plurality of depressions therein, and a plurality of separate basic bodies of a ceramic material mounted in the depressions and forming an upper emplacement surface for supporting the ceramic products.
    Type: Grant
    Filed: April 21, 1986
    Date of Patent: December 29, 1987
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Alfred G. von Matuschka, Klaus Liethschmidt, Hubertus Webert, Emil K. Kohler
  • Patent number: 4687655
    Abstract: The invention is a process for the manufacture of shaped articles of reaction-bonded silicon nitride in which pre-shaped articles of silicon powder are heated in a first stage under a nitrogen gas pressure of at least 6 MPa at a heating rate of not more than 50.degree. C. per hour to a reaction temperature below the melting point of silicon, the article is maintained at the reaction temperature for at least 0.5 hours and subsequently, in a second stage, heating the article at a heating rate of at least 500.degree. C. per hour to a temperature above the melting point of silicon and maintaining the article at that temperature for from 1 to 7 hours. The process can nitridate both pre-shaped articles consisting of silicon powder and, optionally, up to 15% by weight Si.sub.3 N.sub.4 powder and those containing up to 10% by weight of a sintering aid such as Y.sub.2 O.sub.3.
    Type: Grant
    Filed: April 11, 1986
    Date of Patent: August 18, 1987
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Klaus Hunold, Alfred Lipp, Klaus Reinmuth, Peter Arnold, Johannes Napholcz
  • Patent number: 4684480
    Abstract: The invention is a ceramically-bonded large-area neutron absorber articles of low density having a space filling ofabout 40 to 60% by volume boron carbide+silicon carbide in a B.sub.4 C:SiC ratio of about 9:1 to 1:9 andabout 10 to 20% by volume of free carbon, the remainder pores.They have a density of from about 1.5 to 2.2 g/cm.sup.3 and a flexural strength of from about 20 to 50 N/mm.sup.2 at room temperature measured according to the 3-point method, which strength after the corrosion test of immersion for about 3000 hours in boiling water, drops by less than about 40% of the initial value. Graphite powder may optionally be included with a pulverulent organic resin binder and a wetting agent, molding the mixture under pressure at about room temperature, curing the resin binder at temperatures of up to about 180.degree. C. and then coking the molded plates in the absence of air at temperatures of up to about 1000.degree. C. under a controlled temperature program.
    Type: Grant
    Filed: November 13, 1984
    Date of Patent: August 4, 1987
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Alfred Lipp, Klaus Reinmuth, Detlef von Struensee
  • Patent number: 4661740
    Abstract: The invention is a polycrystalline sintered body based on lanthanum hexaboride and having a density of at least 95% of the theoretical density. The sintered body comprises lanthanum hexaboride, boron carbide and amorphous carbon, the content of B.sub.4 C+C being from 0.1 to 10% by weight and the total amount of La+B+C being at least 99.0% by weight, in each case calculated on the total weight. The sintered bodies have a homogeneous microstructure with mean grain sizes<10 .mu.m, in which, in addition to the crystalline lanthanum hexaboride phase, boron carbide and carbon are detectable as separate, finely divided phases.The sintered bodies can be manufactured by pressureless sintering at temperatures of from 2150.degree. to 2200.degree. C. from powder mixtures comprising lanthanum hexaboride and, in addition, mixtures of a carbon-containing material and a boron component.
    Type: Grant
    Filed: April 21, 1986
    Date of Patent: April 28, 1987
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Heinrich Knoch, Eckhart Bechler, Alfred Lipp
  • Patent number: 4642135
    Abstract: The invention relates to a process for treating cast iron melts with silicon carbide. In this process, the silicon carbide used is subjected, before being introduced into the cast iron melt, to an oxidizing treatment in such a manner that the individual SiC granules are coated with a covering containing silica. A silicon carbide of this quality can be manufactured, for example, by subjecting the SiC in granular form, in a static or agitated mass, to an oxidizing atmosphere, such as air, oxygen or water vapor, at temperatures within the range of 900.degree.-1600.degree. C. and subsequently subjecting the agglomerates formed to gentle comminution to expose the SiC surfaces which, as a result of the formation of an agglomerate, completely or partially escaped the oxidizing attack.
    Type: Grant
    Filed: August 16, 1985
    Date of Patent: February 10, 1987
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Theodor Benecke, Benno Lux, Wolf-Dieter Schubert, An Tuan Ta, Gerhard Kahr
  • Patent number: 4637837
    Abstract: A process is provided for boriding metals and metal alloys in a fluidized bed at a temperature of from about 580.degree. to about 1300.degree. C. As a boriding agent, there was used a granular material comprising essentially spherical particles having a particle size of from about 0.025 to about 5.00 mm, which granular material was manufactured by spray drying a preferably aqueous suspension or dispersion based on materials that yield boron, and which can contain fillers, extenders and binders.
    Type: Grant
    Filed: June 20, 1985
    Date of Patent: January 20, 1987
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Alfred G. von Matuschka, Norbert Trausner
  • Patent number: 4634640
    Abstract: The invention is a shaped article of boron nitride having a density of at least 95% of the theoretical density which consists of polycrystalline hexagonal boron nitride in the form of a homogeneous isotropic microstructure and which has been manufactured from pure boron nitride powder without the concomitant use of sintering aids by isostatic hot-pressing in a vacuum-tight casing at temperatures of from about 1200.degree. to 1500.degree. C. under a pressure of from about 50 to 300 MPa. Boron nitride powders having a free boric oxide content of not more than 1.0% by weight and having a specific surface area of from 5 to 30 m.sup.2 /g are used as starting material. The powders either are filled into prefabricated casings consisting of steel or glass and densified by vibration or are preshaped to form green bodies having pores open to the surface and then placed in prefabricated casings or coated with a material which forms a vacuum-tight casing.
    Type: Grant
    Filed: August 31, 1984
    Date of Patent: January 6, 1987
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Klaus Hunold, Alfred Lipp, Klaus Reinmuth
  • Patent number: 4614724
    Abstract: The invention relates to polycrystalline sintered compact based on europium hexaboride having a density of at least 85% of the theoretical density. The compacts comprise EuB.sub.6, from about 0.1 to 10% by weight of B.sub.4 C and, optionally, amorphous carbon, and have a total of Eu+B+C of at least 98.5% by weight. They have a homogeneous microstructure with mean grain sizes of less than 20 .mu.m, in which, in addition to the crystalline phase EuB.sub.6-x C.sub.x, in which x has values of from 0 to 0.25, B.sub.4 C can be detected as a separate, finely divided, crystalline phase.The sintered compacts can be manufactured from powder mixtures comprising europium hexaboride of stoichiometric composition and additions of boron carbide and/or mixtures of a carbon-containing material and a boron component by means of hot pressing in graphite moulds, by means of isostatic hot pressing in casings that can be sealed so that they are gas-impermeable, or by means of pressureless sintering.
    Type: Grant
    Filed: December 19, 1983
    Date of Patent: September 30, 1986
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Heinrich Knoch, Karl A. Schwetz, Alfred Lipp, Eckhart Bechler
  • Patent number: 4564601
    Abstract: The invention is substantially pore-free shaped articles which consist essentially of polycrystalline .alpha.- or .beta.-silicon carbide in the form of a single-phase homogeneous microstructure having grain sizes not exceeding 8 .mu.m, and which are manufactured from SiC powder, without the concomitant use of sintering aides, by isostatic hot-pressing in a vacuum-tight casing at temperatures of from about 1900.degree. C. to 2300.degree. C. and at pressures of from about 100 to 400 MPa. The SiC starting materials have .alpha.- and/or .beta.-SiC powders having a total content of metallic impurities not exceeding 0.1% by weight and a particle size of 4 .mu.m and finer.
    Type: Grant
    Filed: August 29, 1984
    Date of Patent: January 14, 1986
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Jochen Kriegesmann, Klaus Hunold, Alfred Lipp, Klaus Reinmuth, Karl A. Schwetz
  • Patent number: 4560668
    Abstract: The invention is substantially pore-free shaped articles consisting essentially of polycrystalline silicon nitride and polycrystalline silicon carbide in the form of a homogeneous microstructure having grain sizes of not more than 10 .mu.m manufactured from mixtures of Si.sub.3 N.sub.4 powder and SiC powder in a weight ratio of from 5:95 to 95:5 without the concomitant use of sintering aids by isostatic hot pressing in a vacuum-sealed casing at temperatures of from 1800.degree. to 2200.degree. C. and a pressure of from 100 to 400 MPa.
    Type: Grant
    Filed: September 7, 1984
    Date of Patent: December 24, 1985
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Klaus Hunold, Alfred Lipp, Klaus Reinmuth
  • Patent number: 4528120
    Abstract: The invention is refractory, electrically conductive, mixed materials based on hexagonal boron nitride and at least one electrically conductive component such as titanium boride and zirconium boride, and having a density of at least about 95% of the theoretical density and nondirection-dependent properties, which have been manufactured from powder mixtures that are practically free of oxygen and metal and comprisefrom about 10 to 60% by weight of boron nitride,from about 0 to 60% by weight of aluminum nitride and/or silicon nitride, andfrom about 30 to 70% by weight of an electrically conductive component,without the concomitant use of sintering aids by means of isostatic hot pressing in a vacuum-tight casing at temperatures of from about 1400.degree. to 1700.degree. C. and under a pressure of from about 100 to 300 MPa. The powder mixtures are pre-densified to form green bodies in block form and are then introduced into casings or coated with a material forming a vacuum-tight casing.
    Type: Grant
    Filed: April 19, 1984
    Date of Patent: July 9, 1985
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Klaus Hunold, Alfred Lipp, Klaus Reinmuth
  • Patent number: 4524138
    Abstract: The invention provides substantially pore-free sintered polycrystalline articles comprising .alpha.-silicon carbide, boron carbide and free carbon, the quantitative proportions of which, in percent by weight, are defined by the trapezoidal area having, in the ternary system B/Si/C of FIG. 1 the corner pointsa=89.0% B.sub.4 C, 9.9% .alpha.-Sic, 1.1% Cb=9.9% B.sub.4 C, 89.0% .alpha.-SiC, 1.1% Cc=9.0% B.sub.4 C, 81.0% .alpha.-Sic, 10.0% Cd=81.0% B.sub.4 C, 9.0% .alpha.-SiC, 10.0% CThe articles have a density of at least 99% of the theoretical density, an average structural grain size of less than 20 .mu.m and a 4-point flexural strength of at least 400 N/mm.sup.2. They are manufactured from fine-grained mixtures of .alpha.-silicon carbide, boron carbide, carbon and/or material that can be coked to form carbon, in a two-stage sintering process. In the first stage, green bodies preshaped from the powder are subjected to pressureless sintering to a density of at least 95% TD at from 1950.degree. to 2150.degree. C.
    Type: Grant
    Filed: May 5, 1983
    Date of Patent: June 18, 1985
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Karl A. Schwetz, Klaus Reinmuth, Klaus Hunold, Franz Isemann
  • Patent number: 4495123
    Abstract: The invention is a shaped article of boron nitride having a density of at least 95% of the theoretical density which consists of polycrystalline hexagonal boron nitride in the form of a homogeneous isotropic microstructure and which has been manufactured from pure boron nitride powder without the concomitant use of sintering aids by isostatic hot-pressing in a vacuum-tight casing at temperatures of from about 1200.degree. to 1500.degree. C. under a pressure of from about 50 to 300 MPa. Boron nitride powders having a free boric oxide content of not more than 1.0% by weight and having a specific surface area of from 5 to 30 m.sup.2 /g are used as starting material. The powders either are filled into prefabricated casings consisting of steel or glass and densified by vibration or are preshaped to form green bodies having pores open to the surface and then placed in prefabricated casings or coated with a material which forms a vacuum-tight casing.
    Type: Grant
    Filed: December 29, 1982
    Date of Patent: January 22, 1985
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Klaus Hunold, Alfred Lipp, Klaus Reinmuth
  • Patent number: 4467043
    Abstract: The invention relates to dense shaped articles of polycrystalline .alpha.-silicon carbide containing from 0.1 to 0.4%, by weight, of aluminum and optionally, a small amount of nitrogen and/or phosphorus, having a homogeneous virtually single-phase microstructure. The additional constituents are substantially in the form of a solid solution in the .alpha.-SiC lattice. The shaped articles are distinguished by flexural strength of at least 600 N/mm.sup.2 up to 1450.degree. C. and low subcritical crack propagation under mechanical stress. The fracture mechanism is trans granular up to at least 1450.degree. C. The shaped articles are manufactured by simultaneously shaping and hot pressing pulverulent .alpha.-silicon carbide containing a small amount of an aluminum-containing additive, such as aluminum powder, aluminum nitride and/or aluminum phosphide, at temperatures between 1850.degree. C. and 2300.degree. C. under a pressure of at least 100 bar (10 MPa).
    Type: Grant
    Filed: June 23, 1983
    Date of Patent: August 21, 1984
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Jochen Kriegesmann, Alfred Lipp, Klaus Reinmuth
  • Patent number: 4439214
    Abstract: The invention is a device for the dry purification of gases under low pressure by adsorption of the impurities, particularly hydrogen sulfide, on a fixed bed of adsorbent material. The entire surface of the gas adsorbent material is spread as a loose layer on the ground and is covered with a gas-impermeable plastic or with a gas-impermeable fabric. Underneath the gas purifying adsorbent layer is a layer of gas-permeable material, in which are embedded gas-carrying pipes which are connected to a collecting pipe laid underground. Gas carrying pipes are arranged between the surface of the particulate adsorption layer and the cover.
    Type: Grant
    Filed: July 22, 1982
    Date of Patent: March 27, 1984
    Assignee: Elektroschmelzwerk Kempten GmbH
    Inventors: Gunther Wiebke, deceased, Gunter Maurer, Piet J. L. Laurijsen, Roman Kurth