Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
Abstract: A single crystal diamond prepared by CVD and having one or more electronic characteristics; making the diamond suitable for electronic applications. Also provided is a method of making the single crystal CVD diamond.
Type:
Grant
Filed:
October 3, 2008
Date of Patent:
August 6, 2013
Assignee:
Element Six Ltd.
Inventors:
Geoffrey Alan Scarsbrook, Philip Maurice Martineau, John Lloyd Collins, Ricardo Simon Sussmann, Bärbel Susanne Charlotte Dorn, Andrew John Whitehead, Daniel James Twitchen
Abstract: The present invention relates to diamond material comprising a boron doped single crystal diamond substrate layer having a first surface and a boron doped single crystal diamond conductive layer on said first surface, wherein the distribution of boron in the conductive layer is more uniform than the distribution of boron in the substrate layer.