Abstract: An electrochemical cell for treating a fluid, the electrochemical cell comprising: at least two opposing electrodes defining a flow path for the fluid between the electrodes, where at least one of the electrodes is formed of electrically conductive diamond material; drive circuitry configured to apply a potential across the electrodes such that a current flows between the electrodes when the fluid is flowed through the flow path between the electrodes; and a housing in which the electrodes are disposed, the housing comprising pressure seals configured to containing the fluid within the fluid path and a support structure for supporting the electrodes, wherein the support structure and the pressure seals are configured such that the electrochemical cell has an operating pressure in a range 2 to 10 bar within which the electrodes are supported without fracturing and within which the fluid is contained within the flow path, wherein the electrodes are spaced apart by a distance in a range 0.

Abstract: A poly crystalline chemical vapour deposited (CVD) diamond wafer comprising: —a diameter >40 mm; —a thickness >1.0 mm; —an absorption coefficient ?0.1 cm?1 at 10.6 ?m; and ?a micro feature density, especially in the form of “black spots”, meeting the following specification: —in a central area of the polycrystalline CVD diamond wafer from 0 to 20 mm radius there are no more than 100 micro features of a size between 0.002 and 0.008 mm2, no more than 50 micro features of a size between 0.008 and 0.018 mm2, no more than 25 microfeatures of a size between 0.018 and 0.05 mm2, and zero microfeatures of a size between 0.05 and 0.1 mm2, and ?in an outer region of the polycrystalline CVD diamond wafer from 20 to 40 mm radius there are no more than 200 microfeatures 2 of a size between 0.002 and 0.008 mm2, no more than 150 microfeatures of a size between 0.008 and 0.018 mm2, no more than 100 microfeatures of a size between 0.018 and 0.05 mm2, and zero microfeatures of a size between 0.05 and 0.1 mm2.

Abstract: A semiconductor device comprising: a semiconductor component; a diamond heat spreader; and a metal bond, wherein the semiconductor component is bonded to the diamond heat spreader via the metal bond, wherein the metal bond comprises a layer of chromium bonded to the diamond heat spreader and a further metal layer disposed between the layer of chromium and the semiconductor component, and wherein the semiconductor component is configured to operate at an areal power density of at least 1 kW/cm2 and/or a linear power density of at least 1 W/mm.