Abstract: A single crystal diamond material comprising: neutral nitrogen-vacancy defects (NV0); negatively charged nitrogen-vacancy defects (NV?); and single substitutional nitrogen defects (Ns) which transfer their charge to the neutral nitrogen-vacancy defects (NV0) to convert them into the negatively charged nitrogen-vacancy defects (NV), characterized in that the single crystal diamond material has a magnetometry figure of merit (FOM) of at least 2, wherein the magnetometry figure of merit is defined by (I) where R is a ratio of concentrations of negatively charged nitrogen-vacancy defects to neutral nitrogen-vacancy defects ([NV?]/[NV0]), [NV?] is the concentration of negatively charged nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, [NV0] is a concentration of neutral nitrogen-vacancy defects measured in parts-per-million (ppm) atoms of the single crystal diamond material, and T2? is a decoherence time of the NV? defects, where T2? is T2* for DC magnetome
Type:
Grant
Filed:
December 6, 2016
Date of Patent:
July 26, 2022
Assignees:
Element Six Technologies Limited, Element Six Technologies US Corporation
Inventors:
Wilbur Lew, Gregory Bruce, Andrew Mark Edmonds, Matthew Lee Markham, Alastair Douglas Stacey, Harpreet Kaur Dhillon
Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
Type:
Grant
Filed:
February 28, 2013
Date of Patent:
June 7, 2016
Assignee:
ELEMENT SIX TECHNOLOGIES US CORPORATION
Inventors:
Daniel Francis, Firooz Faili, Kristopher Matthews, Frank Yantis Lowe, Quentin Diduck, Sergey Zaytsev, Felix Ejeckam
Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
Type:
Grant
Filed:
September 10, 2012
Date of Patent:
February 3, 2015
Assignee:
Element Six Technologies US Corporation
Inventors:
Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
Abstract: High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.
Type:
Grant
Filed:
August 12, 2010
Date of Patent:
August 5, 2014
Assignee:
Element Six Technologies US Corporation
Inventors:
Dubravko I. Babic, Quentin E. Diduck, Alex Schreiber
Abstract: Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
Type:
Grant
Filed:
January 24, 2014
Date of Patent:
June 24, 2014
Assignee:
Element Six Technologies US Corporation
Inventors:
Felix Ejeckam, Daniel Francis, Quentin Diduck, Firooz Nasser-Faili, Dubravko Babić
Abstract: Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
Type:
Application
Filed:
January 24, 2014
Publication date:
May 22, 2014
Applicant:
ELEMENT SIX TECHNOLOGIES US CORPORATION
Inventors:
Dubravko Babic, Firooz Nasser-Faili, Daniel Francis, Quentin Diduck, Felix Ejeckam
Abstract: Methods for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer made out of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
Type:
Grant
Filed:
February 28, 2012
Date of Patent:
March 18, 2014
Assignee:
Element Six Technologies US Corporation
Inventors:
Dubravko Babić, Firooz Faili, Daniel Francis, Quentin Diduck, Felix Ejeckam