Patents Assigned to ELFYS OY
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Publication number: 20230420585Abstract: This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.Type: ApplicationFiled: September 7, 2023Publication date: December 28, 2023Applicant: ELFYS OYInventors: Antti HAARAHILTUNEN, Juha HEINONEN, Mikko JUNTUNEN, Chiara MODANESE, Toni PASANEN, Hele SAVIN, Ville VÄHÄNISSI
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Patent number: 11810987Abstract: This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.Type: GrantFiled: May 26, 2020Date of Patent: November 7, 2023Assignee: ELFYS OYInventors: Antti Haarahiltunen, Juha Heinonen, Mikko Juntunen, Chiara Modanese, Toni Pasanen, Hele Savin, Ville Vähänissi
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Publication number: 20220216354Abstract: This disclosure relates to a radiation sensor element comprising a semiconductor substrate, having a bulk refractive index; a front surface; a back surface, extending substantially along a base plane; and a plurality of pixel portions. Each pixel portion comprises a collection region on the back surface and a textured region on the front surface. The textured regions comprise high aspect ratio nanostructures, extending substantially along a thickness direction perpendicular to the base plane and forming an optical conversion layer, having an effective refractive index gradually changing towards the bulk refractive index to reduce reflection of light incident on said pixel portion from the front side of the semiconductor substrate.Type: ApplicationFiled: May 26, 2020Publication date: July 7, 2022Applicant: ELFYS OYInventors: Antti HAARAHILTUNEN, Juha HEINONEN, Mikko JUNTUNEN, Chiara MODANESE, Toni PASANEN, Hele SAVIN, Ville VÄHÄNISSI
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Patent number: 10950737Abstract: A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.Type: GrantFiled: February 13, 2018Date of Patent: March 16, 2021Assignee: ELFYS OYInventors: Mikko Juntunen, Hele Savin, Ville Vähänissi, Päivikki Repo, Juha Heinonen
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Publication number: 20190386157Abstract: A layered semiconductor structure with a width in a lateral direction, having an operating area covering part of the width of the semiconductor structure, comprises a semiconductor substrate with majority charge carriers of a first polarity; and a first dielectric layer with inducing net charge of the first polarity on the semiconductor substrate. An induced junction is induced in the semiconductor substrate by an electric field generated in the semiconductor substrate by the inducing net charge. The semiconductor structure is configured to confine the electric field generated in the semiconductor substrate in the operating area.Type: ApplicationFiled: February 13, 2018Publication date: December 19, 2019Applicant: ELFYS OYInventors: Mikko JUNTUNEN, Hele SAVIN, Ville VÄHÄNISSI, Päivikki REPO, Juha HEINONEN