Abstract: A light-emitting device with an array of window openings to enhance the light extraction efficiency from this device is provided. This array of window openings is employed to create a much larger sidewall area to enhance the light extraction from the sidewalls of these openings. With this array of window openings, photons trapped due to the total internal reflection can propagate within the device and be extracted from the sidewalls of these openings. A variation of designs can be applied to the array of window openings. Even the shape of these openings can be designed such that the area of the sidewalls is increased. Large-sized light-emitting diodes can improve the light extraction efficiency by employing the array of window openings.

Abstract: The present invention utilizes high-indium-content InxGa1-xN islands (0<x?1) formed on a top of a p-type GaN based layer to reduce contact resistance between an electrode and the p-type GaN based layer. These InxGa1-xN islands serve as channels for electrical current to flow through and dramatically reduce the contact resistance between the electrode and the p-type GaN based layer so as to improve device performance. This structure of InxGa1-xN islands can be applied to all III-nitride based electronic and optoelectronic devices requiring good p-type ohmic contacts to improve device performance.