Abstract: A method of biasing word lines in a flash memory array wherein a selected word line is selected for a reading operation during data access includes the steps of biasing deselected word lines with a deselected word line voltage, delaying for a delay period and after the delay period, biasing the selected word line with a selected word line voltage for performing the reading operation.
Type:
Grant
Filed:
October 28, 2005
Date of Patent:
April 29, 2008
Assignee:
Elite Semicondutor Memory Technology, Inc.