Abstract: In a contact-bumpless chip contacting method for contacting a chip having a plurality of conductive contact areas, which are not provided with an additional metallization layer, a carrier substrate is provided, which has a first surface having arranged thereon a plurality of conductive connecting sections. A non-conductive adhesive layer is arranged on the first surface of the carrier substrate and subsequently, the carrier substrate is aligned with the chip to be contacted such that a plurality of conductive contact areas on the chip to be contacted is in alignment with the connecting sections on the first surface of the carrier substrate. Then the carrier substrate is connected to the chip to be contacted by means of the adhesive layer in such a way that the connecting sections of the carrier substrate and the contact areas of the chip abut on one another by means of pressure contact, without any intermetallic connection being established.

Abstract: Method for the preparation of electrodeposited or galvanically deposited bumps for the bonding of integrated circuits, characterized by two subsequent metal depositions, deposited without an external current source (chemical metal deposition) on a metallization 1, the first deposition being thicker than the second and the second deposition being more even or more regular throughout a large area than the first one.