Patents Assigned to Elm Technology
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Publication number: 20080254572Abstract: The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.Type: ApplicationFiled: June 21, 2008Publication date: October 16, 2008Applicant: ELM TECHNOLOGY CORPORATIONInventor: Glenn J. Leedy
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Publication number: 20080237591Abstract: The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.Type: ApplicationFiled: May 9, 2008Publication date: October 2, 2008Applicant: Elm Technology CorporationInventor: Glenn J. Leedy
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Patent number: 7402897Abstract: The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single integrated circuit die or component and wherein the individual device layers used in the VSI fabrication processes are preferably previously fabricated components intended for generic multiple application use and not necessarily limited in its use to a specific application. The VSI method of integration lowers the cost difference between lower volume custom electronic products and high volume generic use electronic products by eliminating or reducing circuit design, layout, tooling and fabrication costs.Type: GrantFiled: August 8, 2003Date of Patent: July 22, 2008Assignee: Elm Technology CorporationInventor: Glenn J. Leedy
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Patent number: 7385835Abstract: General purpose methods for the fabrication of 5 integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially forced from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D 1C fabrication.Type: GrantFiled: December 18, 2003Date of Patent: June 10, 2008Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Patent number: 7338598Abstract: A fluid treatment system for reducing odor, bacteria, and biological oxygen demand from a fluid having at least one tube, a control box, and a pump. The at least one tube has a plurality of conductors in electrical communication with the control box. The control box controls the level of electrical communication to the plurality of conductors and the flow rate of the pump. The principle use is for biomass material derived from animals, however other fluids will benefit from this invention. For example, fluids derived from plants and humans as well as industrial and commercial applications will benefit from this application.Type: GrantFiled: November 12, 2004Date of Patent: March 4, 2008Assignee: Elm Technologies, L.L.C.Inventors: Jamel Bourazak, Larry Coleman
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Patent number: 7309442Abstract: A fluid treatment system for reducing odor, bacteria, and biological oxygen demand from a fluid having at least one tube, a control box, and a pump. The at least one tube has a plurality of conductors in electrical communication with the control box. The control box controls the level of electrical communication to the plurality of conductors and the flow rate of the pump. The principle use is for biomass material derived from animals, however other fluids will benefit from this invention. For example, fluids derived from plants and humans will benefit from this application.Type: GrantFiled: November 12, 2004Date of Patent: December 18, 2007Assignee: Elm Technologies, L.L.C.Inventors: Jamel Bourazak, Larry Coleman
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Patent number: 7307020Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: GrantFiled: December 18, 2003Date of Patent: December 11, 2007Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Patent number: 7306721Abstract: A fluid treatment system for reducing odor, bacteria, and biological oxygen demand from a fluid having at least one tube, a control box, and a pump. The at least one tube has a plurality of conductors in electrical communication with the control box. The control box controls the level of electrical communication to the plurality of conductors and the flow rate of the pump. The principle use is for biomass material derived from animals, however other fluids will benefit from this invention. For example, fluids derived from plants and humans will benefit from this application.Type: GrantFiled: November 12, 2004Date of Patent: December 11, 2007Assignee: Elm Technologies, L.L.C.Inventors: Jamel Bourazak, Larry Coleman
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Patent number: 7267762Abstract: A fluid treatment system for reducing odor, bacteria, and biological oxygen demand from a fluid having at least one tube, a control box, and a pump. The at least one tube has a plurality of conductors in electrical communication with the control box. The control box controls the level of electrical communication to the plurality of conductors and the flow rate of the pump. The principle use is for biomass material derived from animals, however other fluids will benefit from this invention. For example, fluids derived from plants and humans will benefit from this application.Type: GrantFiled: November 12, 2004Date of Patent: September 11, 2007Assignee: Elm Technologies, L.L.C.Inventors: Jamel Bourazak, Larry Coleman
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Patent number: 7264712Abstract: A fluid treatment system for reducing odor, bacteria, and biological oxygen demand from a fluid having at least one tube, a control box, and a pump. The at least one tube has a plurality of conductors in electrical communication with the control box. The control box controls the level of electrical communication to the plurality of conductors and the flow rate of the pump. The principle use is for biomass material derived from animals, however other fluids will benefit from this invention. For example, fluids derived from plants and humans will benefit from this application.Type: GrantFiled: November 12, 2004Date of Patent: September 4, 2007Assignee: Elm Technologies, L.L.C.Inventors: Jamel Bourazak, Larry Coleman
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Patent number: 7242012Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: GrantFiled: March 7, 2003Date of Patent: July 10, 2007Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Patent number: 7223696Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: GrantFiled: January 27, 2004Date of Patent: May 29, 2007Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Patent number: 7193239Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost. Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.Type: GrantFiled: July 3, 2003Date of Patent: March 20, 2007Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Patent number: 7176545Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: GrantFiled: January 27, 2004Date of Patent: February 13, 2007Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Patent number: 7138295Abstract: A Three-Dimensional Structure (3DS) Memory allows for physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized. One control logic circuit suffices for several memory circuits, reducing cost Fabrication of 3DS memory involves thinning of the memory circuit to less than 50 ?m in thickness and bonding the circuit to a circuit stack while still in wafer substrate form. Fine-grain high density inter-layer vertical bus connections are used. The 3DS memory manufacturing method enables several performance and physical size efficiencies, and is implemented with established semiconductor processing techniques.Type: GrantFiled: December 18, 2003Date of Patent: November 21, 2006Assignee: Elm Technology CorporationInventor: Glenn J Leedy
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Publication number: 20050156265Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: ApplicationFiled: January 24, 2005Publication date: July 21, 2005Applicant: Elm Technology CorporationInventor: Glenn Leedy
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Patent number: 6891387Abstract: A system which performs multi-functions including reducing the thickness of oxides on contact pads and probing, testing, burn-in, repairing, programming and binning of integrated circuits. The system includes: at least one module having a holding fixture, a wafer, a probing device, an electronic circuit board, and a temperature control device. There are a number of integrated circuits on the wafer, and the probing device simultaneously contacts substantially all of the electrical contacts in the integrated circuits. There is a plurality of active switching circuits on the probing device. The module may also have a gas source for supplying non-oxidizing gases such as nitrogen and hydrogen into the chamber, a handler for moving the wafers and the probing devices, and a computer coupled to the chamber for controlling and communicating with the handler, the temperature control devices, the holding fixtures and the probing devices.Type: GrantFiled: June 9, 2004Date of Patent: May 10, 2005Assignee: Elm Technology CorporationInventor: Glenn Leedy
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Publication number: 20050082641Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.Type: ApplicationFiled: October 22, 2004Publication date: April 21, 2005Applicant: Elm Technology CorporationInventor: Glenn Leedy
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Patent number: 6875347Abstract: A fluid treatment system for reducing odor, bacteria, and biological oxygen demand from a fluid having at least one tube, a control box, and a pump. The at least one tube has a plurality of conductors in electrical communication with the control box. The control box controls the level of electrical communication to the plurality of conductors and the flow rate of the pump. The principle use is for biomass material derived from animals, however other fluids will benefit from this invention. For example, fluids derived from plants and humans will benefit from this application.Type: GrantFiled: December 17, 2002Date of Patent: April 5, 2005Assignee: Elm Technologies, L.L.C.Inventors: Jamel Bourazak, Larry Coleman
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Patent number: 6838896Abstract: A single gas tight system may perform multi-functions including reducing the thickness of oxides on contact pads and probing, testing, burn-in, repairing, programming and binning of integrated circuits. A holding fixture holds a wafer having integrated circuits and aligns the wafer to a full-substrate probing device. A temperature control device is used to heat the wafer during an oxide reduction process or during burn-in of the wafer. During the oxide reduction process, hydrogen is introduced into the chamber, and the wafer is heated so that the oxides on the contact pads can combine with hydrogen to form water vapor, thus reducing the thickness of the oxides. A computer analyzes the test and/or burn-in data and provides control signals for repairing or programming the integrated circuits.Type: GrantFiled: September 6, 2001Date of Patent: January 4, 2005Assignee: Elm Technology CorporationInventor: Glenn Leedy