Abstract: Disclosed is a semiconductor light emitting device including: A semiconductor light emitting device comprising: a semiconductor light emitting device chip including a plurality of semiconductor layers, and electrodes electrically connected to the plurality of semiconductor layers, the plurality of semiconductor layers including an active layer adapted to generate light by recombination of electrons and holes; an encapsulating member of a lens shape made of a light-transmitting thermoplastic resin having at least 90% transmissivity for light of a wavelength band ranging from 100 nm to 400 nm, for surrounding the semiconductor light emitting device chip; and an external substrate including conductive layers electrically connected to the electrodes of the semiconductor light emitting device chip. The encapsulating member is formed in a way that all faces of the encapsulating member are exposed to outside, except for a portion of the lower face thereof in contact with the external substrate.